1 / 9

CIGS ink synthesis Stored with stirring

CIGS ink synthesis Stored with stirring as-made : ~15% of particles remained after 7000rpm centrifugation 1 day after : less particles remained after centrifugation 5 day after : no particles remained after centrifugation. (agglomerated particles). To prevent agglomeration:

bikita
Télécharger la présentation

CIGS ink synthesis Stored with stirring

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. CIGS ink synthesis Stored with stirring as-made : ~15% of particles remained after 7000rpm centrifugation 1 day after : less particles remained after centrifugation 5 day after : no particles remained after centrifugation (agglomerated particles)

  2. To prevent agglomeration: Longer reaction time : 4hrs. -> 5hrs. Storing : As-made -> remove remaining precursors by centrifugation remove large particles and agglomerates by centrifugation add small amount of ligands

  3. Crystal structure Mo a:3.150 MoSe2 a:3.289 c:12.927 CuInSe2 a:5.814 c:11.63

  4. CIGS growth on (100)-oriented Mo 3.15 4.45 4.11 Mo (100) CIGS (112)

  5. CIGS growth on (110)-oriented Mo 5.81 4.45 2.52 2.73 3.15 5.81 Mo (110) CIGS (220/204)

  6. CIGS orientation vs. device efficiency • Most efficient devices have (220/204) oriented absorbers • (220/204) oriented films are: • More resistive • Bandgaps are lower • Lower sheet resistances • Higher efficiency due to increased fill factors • Easier diffusion of Cd2+ ions • Lower series resistance Reference Contreras, M. A.,  Jones, K. M.,  Gedvilas, L. and Matson, R. (2001) Proc. 16th Eur. Photovolt. Solar Energy Conf. p. 732. James & James , London

  7. MoSe2 3.29 (110) (001)

  8. MoSe2 (001)-oriented MoSe2: High series resistance Easily cleaved and peeled off • Parallel to c-axis • 3690Ω∙cm • 1μm – 0.37Ω∙cm2 • Perpendicular to c-axis • 2.5Ω∙cm • 1μm – 0.00025Ω∙cm2

  9. Substrate effect on CIGS process Cu,In,Ga,Se Se Cu-In-Ga alloy Co-evaporation : Nucleation on substrate surface Selenization : Nucleation on precursor surface or medium

More Related