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Study of irradiated 3D detectors

Study of irradiated 3D detectors. Patrick Roy. G. Pellegrini, A. Al-Ajili, L. Haddad, J. Melone, V. O'Shea, K.M. Smith, V. Wright, M. Rahman. Overview. Introduction Fabrication: -Dry etching -Laser machining -Photoelectrochemical etching

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Study of irradiated 3D detectors

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  1. Study of irradiated 3D detectors Patrick Roy G. Pellegrini, A. Al-Ajili, L. Haddad, J. Melone, V. O'Shea, K.M. Smith, V. Wright, M. Rahman

  2. Overview Introduction Fabrication: -Dry etching -Laser machining -Photoelectrochemical etching -Electrical contacts Results: -Before irradiation -After irradiation Conclusion

  3. Introduction

  4. 2 0 0 0 2 0 0 0 s t a n d a r d s i l i c o n ] V 1 5 0 0 1 5 0 0 [ ) m 6 6 0 0 0 0 0 0 e e f f o o r r B B - - l l a a y y e e r r m 0 0 1 0 0 0 1 0 0 0 2 ( p e d o p e r a t i o n v o l t a g e : 6 0 0 V V 5 0 0 5 0 0 o x y g e n a t e d s i l i c o n 0 1 2 3 4 5 6 7 8 9 1 0 t i m e [ y e a r s ] Damage projection for the ATLAS B-layer (3rd RD48 STATUS REPORT CERN LHCC 2000-009, LEB Status Report/RD48, 31 December 1999). Motivation • 3D detector! Vdep qw2Neff/2e

  5. Dry etching Laser drilling PEC etching Creation of the holes Creation of the electrodes Shottky-Schottky n-Shottky p-n junction Connection to the electronics Wire bonding Bump bonding Fabrication steps

  6. Dry etching Inductively Coupled Plasma • Mask: photoresist • Gas: SF6 • Coating: C4F8 • Diameter: 10 mm • Spacing: 85 mm • Depth: 130 mm • Etch time: 100 minutes Aspect ratio 13:1 Expect < 20:1

  7. Laser machining in Si Ti:Sapphire laser (TOPS facility at Strathclyde University*) 3 mJpulse with duration of 40 fs at 1 kHz repetition rate 810 nm wavelength or 405 nm wavelength (doubling crystal) • Diameter: • Front: 8 -10 mm • Back: 6 - 8 mm • Spacing: 85 mm • Depth: 200 mm • Power: 75 mW • Time: 5 sec/holes Aspect ratio 25:1 • In collaboration with D.A. Jaroszynski and D. Jones of Strathclyde University

  8. PEC etching in Si • Mask: 100 nm l/s SiN • Solution: 2.5% aqueous HF • Diameter: 10 mm • Spacing: 25 mm • Depth: 120 mm • Etch time: 480 minutes Aspect ratio 12:1 Expect > 100:1

  9. Electrical contacts • Metal evaporation: • Ti (33 nm) • Pd (33 nm) • Au (150 nm) • Tracks of Al (150 nm) • (over the SiO2 layer) • Wire bonding • (25 mm wire)

  10. Results with a particles Material Silicon GaAs Resolution ~27% ~54% CCE ~60% ~47%

  11. Results with X-Ray in GaAs Resolution ~44% CCE ~70%

  12. Irradiation at PSI Irradiation with 300 MeV/c p at PSI (Villigen*) Bunch of 1 ns every 19 ns. Flux of 1014p/cm2/day. Fluences between 1012 and 1014p/cm2. Irradiation performed by K. Gabathuler, M. Glaser and M. Moll.

  13. Leakage current

  14. Fabrication comparison Aspect ratios Sidewall damages Technique currently expected Standard process Expensive Most promising Dry etching Laser drilling PEC etching 13:1 25:1 12:1 <20:1 ~50:1 >100:1 yes yes no Metal evaporation n or p type doping Simple process Complex process Good for GaAs Good for Si

  15. Conclusion Dry etching ==> 13:1 in silicon Laser machining ==> 25:1 material independent PEC etching ==> 12:1 in silicon Irradiated working devices in Si and GaAs

  16. In development Run II with fs laser in GaAs and SiC Improvement of PEC etching Improvement of dry etching Connection to DAC readout chip Better contacts Proton irradiation of samples

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