1 / 10

- PicoSEC - STMicroelectronics activities Overview

- PicoSEC - STMicroelectronics activities Overview. D. Sanfilippo. Outline. The Silicon PhotoMultiplier Technology overview Electro-optical characteristics STMicroelectronics activities overview. The Silicon Photo Multiplier (SiPM).

dyre
Télécharger la présentation

- PicoSEC - STMicroelectronics activities Overview

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. - PicoSEC -STMicroelectronics activitiesOverview D. Sanfilippo

  2. Outline The Silicon PhotoMultiplier Technology overview Electro-optical characteristics STMicroelectronics activities overview D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  3. The Silicon Photo Multiplier (SiPM) • The Silicon PhotoMultiplier (SiPM) is a multi-cell semiconductor photon sensor; each cell operates as an independent photon counter • Cells are biased above the breakdown voltage and operate in Geiger mode; the discharge is quenched by a resistor connected to each diode • The individual signal amplitude does not depend on the number of photons firing the cell: each element operates digitally as a binary device • The SiPM output signal amplitude is the sum of signals from all the fired cells: it works as an analog detector that can measure light intensity D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  4. Technological features • N on P technology • Shallow junction • In-situ doped poly-silicon cathode layer • Integrated poly-silicon resistors Thin optical trench with metal filling Tunable Anti-reflection coating Dedicated gettering techniques Double layer passivation ARC double layer P+ type Anode backside contact D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  5. Device layout • Single pixel • Monolithic Array 2x2 Single pixel Pixel 2 Pixel 1 Pixel 4 Pixel 3 D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  6. SMD Optical Package Top view Bottom view Cross section D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  7. SiPM electrical characteristics Typical Breakdown voltage: 28 V Operative over-voltage range (OV): 3 ÷ 6 V Gain: ~ 3*106 · @ 3 V OV Dark current: ~ 250 nA/mm2 @ 3 V OV High bias discharge Breakdown Bias range D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  8. Optical characterization Experimental Setup Pulse Amplitude Spectrum Oscilloscope acquisition D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  9. Activities overview STMicroelectronics core activity: Develop a dedicated photon sensor for the Project, in particular a Silicon PhotoMultiplier (SiPM). Specific items: Design a new device with a dedicated layout Optimize the fabrication process Design and develop a functional package Perform the electrical characterization Perform the optical characterization D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  10. Thank You! D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

More Related