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ELEC1700 Computer Engineering 1 Week 10 Monday lecture Memory Semester 1, 2013

ELEC1700 Computer Engineering 1 Week 10 Monday lecture Memory Semester 1, 2013. Memory basics ROM RAM Memory expansion. Memory. Basic memory array. 000. Smallest unit of storage is a bit Most applications store data in bytes (8 bits) or multiples of bytes

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ELEC1700 Computer Engineering 1 Week 10 Monday lecture Memory Semester 1, 2013

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  1. ELEC1700Computer Engineering 1Week 10 Monday lectureMemory Semester 1, 2013

  2. Memory basics ROM RAM Memory expansion Memory

  3. Basic memory array 000 • Smallest unit of storage is a bit • Most applications store data in bytes (8 bits) • or multiples of bytes • Location of a unit of data in a memory is called the address • Capacity of a memory is the total number of data units stored 001 010 011 100 101 110 111 Example: • 8 addresses 000,001,…,111 • 64-bit capacity

  4. Write operation Address register Data register Address decoder Byte organized memory array Address bus Data bus Write • address is placed on the address bus • data placed on data bus • a WRITE command is issued • Contents of data register overwrites original memory contents

  5. Read operation Address register Data register Address decoder Byte organized memory array Address bus Data bus Read • address is placed on the address bus • a READ command is issued • memory puts a copy of the data on the data bus, content of which is read into the data register • The read operation is actually a “copy” operation • original data is not changed • The data bus is a “two-way” path — bidirectional

  6. RAM and ROM Two major categories of semiconductor memory: • RAM = random-access memory • “random access” – all addresses can be selected in any order • also called read/write memory • volatile: stores data only when power is applied • ROM = read-only memory • Data storage is permanent (or semi-permanent) • Non-volatile: Retains stored data when power turned off • Example: BIOS (basic input-output system)

  7. Memory basics ROM RAM Memory expansion Memory

  8. ROM family

  9. 256 × 4 ROM Address Memory locations Hex Binary 00 00000000 01 00000001 02 00000010 : : : : : : : FF 11111111 A total of 256×4 bits stored 1 kbit ROM (1k = 210 = 1024) 4 bits

  10. Internal ROM organisation

  11. ROM access time • To read from ROM: • ROM enabled with chip select pin /CS • address placed on address bus • data appears on data bus (after a delay) • ROM access time is measured from address change to data available

  12. PROMs, EPROMs and EEPROMs VPP A0 A1 O0 A2 O1 A3 O2 A4 O3 A5 O4 A6 O5 A7 O6 A8 O7 A9 A10 CE/PGM OE • PROM = programmable ROM • fused link is burned open during the programming process. Programming cannot be reversed • EPROM = erasable PROM • erased by exposure to UV light through a window. To program it, a high voltage is applied to VPP and OE is brought LOW • EEPROM = electrically erasable PROM

  13. Memory basics ROM RAM Memory expansion Memory

  14. RAM family SRAM Bits stored in a latch or flip-flop DRAM Bits stored as charge on a capacitor

  15. Basic SRAM array • SRAM memory cell based on a D latch • Dout = Din while Select is HIGH • Dout latched when Select goes LOW

  16. Tri-state outputs Week10Mon_tristate.circ

  17. Bidirectional buses

  18. Organisation of SRAM

  19. 32k × 8 SRAM • 215 address lines • 215 = 25 × 210 = 32 × 1k = 32k • 8 I/O lines, so 32k × 8 • Chip select /CS All inputs ignored unless asserted • Write enable /WE /WE and /CS asserted enables input buffers • data bus → RAM • Output enable /OE /OE and /CS asserted enables output buffers • RAM → data bus

  20. SRAM timing • Read cycle sequence • A valid address is put on the address bus • Chip select is LOW • Output enable is LOW • Data placed on data bus by SRAM • Write cycle sequence • A valid address is put on the address bus • Chip select is LOW • Write enable is LOW • Data is placed on the data bus by microprocessor

  21. Dynamic RAM (DRAM) • DRAMs store data bits as a charge on a capacitor • Advantage: very simple • Large memories at low cost per bit • Disadvantage: storage capacitor loses charge • Needs refreshing every 8–16 ms • Refresh circuitry built into DRAM chips Capacitors covered in detail in ELEC1300 “The difference between SRAM and DRAM is that SRAM works and DRAM doesn't”

  22. DRAM organisation Refresh circuitry • DRAMs use address multiplexing to reduce number of address lines • Example: 1M × 1 DRAM • 220 addresses since 220 ~1,000,000 = 1M • But only 10 address lines • A0 time-shares with A10 A1 shares with A11, etc. /RAS = row address strobe /CAS = column address strobe

  23. L2 cache • Fast but expensive, so limited size • ~2MB • Cheap and “slow” • ~4GB • L1 cache in processor • Fast but very limited storage • ~32kB Cache memory Cache analogy: • Home refrigerator ~ cache • Supermarket ~ main memory

  24. Memory basics ROM RAM Memory expansion Memory

  25. Memory modules • DRAM chips commonly supplied on circuit boards • SIMMs = single in-line memory modules • 32-bit data • Capacities up to 64 MB • DIMMs = dual in-line memory modules • 64-bit data • Capacities 1GB and more

  26. Word-length expansion Expansion of two 65,536 x 4 ROMs into a 65,536 x 8 ROM

  27. Word-capacity expansion Two 1M x 8 RAMs configured as a 2M x 8 RAM

  28. Word-capacity expansion What are the ranges of addresses in RAM 1 and RAM 2?

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