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Engineering 43. Chp 6.4 RC OpAmps Ckts. Bruce Mayer, PE Registered Electrical & Mechanical Engineer BMayer@ChabotCollege.edu. RC OpAmp Circuits. Introduce Two Very Important Practical Circuits Based On Operational Amplifiers Recall the OpAmp. The “Ideal” Model That we Use R O = 0
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Engineering 43 Chp 6.4RC OpAmps Ckts Bruce Mayer, PE Registered Electrical & Mechanical EngineerBMayer@ChabotCollege.edu
RC OpAmp Circuits • Introduce Two Very Important Practical Circuits Based On Operational Amplifiers • Recall the OpAmp • The “Ideal” Model That we Use • RO = 0 • Ri = ∞ • Av = ∞ • Consequences of Ideality • RO = 0 vO = Av(v+−v−) • Ri = ∞ i+ = i− = 0 • Av = ∞ v+ = v−
= v 0 + RC OpAmp Ckt Integrator • KCL At v- node • By Ideal OpAmp • Ri = ∞ i+ = i- = 0 • Av = ∞ v+ = v- = 0
RC OpAmp Integrator cont • Separating the Variables and Integrating Yields the Solution for vo(t) • By the Ideal OpAmp Assumptions • Thus the Output is a (negative) SCALED TIME INTEGRAL of the input Signal • A simple Differential Eqn
KVL = v 0 + RC OpAmp Ckt Differentiator • By Ideal OpAmp • v- = GND = 0V • i- = 0 • KCL at v- • Now the KVL
RC OpAmp Differentiator cont. • Recall the Capacitor Integral Law • Recall Ideal OpAmp Assumptions • Ri = ∞ i+ = i- = 0 • Av = ∞ v+ = v- = 0 • Then the KCL • Thus the KVL • Taking the Time Derivative of the above
RC OpAmp Differentiator cont • Examination of this Eqn Reveals That if R1 were ZERO, Then vO would be Proportional to the TIME DERIVATIVE of the input Signal • in Practice An Ideal Differentiator Amplifies Electrical Noise And Does Not Operate • The Resistor R1 Introduces A Filtering Action. • Its Value Is Kept As Small As Possible To Approximate A Differentiator • In the Previous Differential Eqn use KCL to sub vO for i1 • Using
ALL electrical signals are corrupted by external, uncontrollable and often unmeasurable, signals. These undesired signals are referred to as NOISE Signal Signal Noise Noise Aside → Electrical Noise • The Signal-To-Noise Ratio • Use an Ideal Differentiator • Simple Model For A Noisy 1V, 60Hz Sinusoid Corrupted With One MicroVolt of 1GHz Interference • The SN is Degraded Due to Hi-Frequency Noise
Class Exercise Ideal Differen. • Let’s Turn on the Lites for 10 minutes for YOU to Differentiate • Given the IDEAL Differentiator Ckt and INPUT Signal • Find vo(t) over 0-10 ms • Given Input v1(t) • SAWTOOTH Wave • Recall the Differentiator Eqn R1 = 0; Ideal ckt
RC OpAmp Differentiator Ex. • The Slope from 0-5 mS • Given Input v1(t) • For the Ideal Differentiator • Units Analysis
RC OpAmp Differentiator cont. • Derivative Scalar PreFactor • A Similar Analysis for 5-10 mS yields the Complete vO OutPut InPut • Apply the Prefactor Against the INput Signal Time-Derivative (slope)
RC OpAmp Integrator Example • For the Ideal Integrator • Given Input v1(t) • SQUARE Wave • Units Analysis Again
RC OpAmp Integrator Ex. cont. • 0<t<0.1 S • v1(t) = 20 mV (Const) • The Integration PreFactor • 0.1t<0.2 S • v1(t) = –20 mV (Const) • Next Calculate the Area Under the Curve to Determine the Voltage Level At the Break Points • Integrate In Similar Fashion over • 0.2t<0.3 S • 0.3t<0.4 S
RC OpAmp Integrator Ex. cont.1 • Apply the 1000/S PreFactor and Plot Piece-Wise
Practical Example • Simple Circuit Model For a Dynamic Random Access Memory Cell (DRAM) • Note How Undesired Current Leakage is Modeled as an I-Src • Also Note the TINY Value of the Cell-State Capacitance (50x10-15 F)
Practical Example cont • During a WRITE Cycle the Cell Cap is Charged to 3V for a Logic-1 • Thus The TIME PERIOD that the cell can HOLD the Logic-1 value • The Criteria for a Logic “1” • Vcell >1.5 V • Now Recall that V = Q/C • Or in terms of Current • Now Can Calculate the DRAM “Refresh Rate”
Practical Example cont.2 • Consider the Cell at the Beginning of a READ Operation • When the Switch is Connected Have Caps in Parallel • Then The Output • Calc the Change in VI/O at the READ
Design an OpAmp ckt to implement in HARDWARE this Math Relation Design Example • Examine the Reln to find an Integrator Adder
The Proposed Solution Design Example • The by Ideal OpAmps & KCL & KVL &Superposition
Design Example • The Ckt Eqn • Then the Design Eqns • This means that we, as ckt designers, get to PICK 3 values • For 1st Cut Choose • C = 20 μF • R1 = 100 kΩ • R4 = 20 kΩ • TWO Eqns in FIVE unknowns
In the Design Eqns Design Example 20μ 20k 20k 100k 10k • If the voltages are <10V, then all currents should be the in mA range, which should prevent over-heating • Then the DESIGN
WhiteBoard Work • Let’s Work These Probs 80k choose C such that Find Energy Stored on Cx
APPENDIX IC GROUND BOUNCE
LEARNING EXAMPLE FLIP CHIP MOUNTING IC WITH WIREBONDS TO THE OUTSIDE GOAL: REDUCE INDUCTANCE IN THE WIRING AND REDUCE THE “GROUND BOUNCE” EFFECT A SIMPLE MODEL CAN BE USED TO DESCRIBE GROUND BOUNCE
MODELING THE GROUND BOUNCE EFFECT IF ALL GATES IN A CHIP ARE CONNECTED TO A SINGLE GROUND THE CURRENT CAN BE QUITE HIGH AND THE BOUNCE MAY BECOME UNACCEPTABLE USE SEVERAL GROUND CONNECTIONS (BALLS) AND ALLOCATE A FRACTION OF THE GATES TO EACH BALL