1 / 12

Chapter 3

Chapter 3. ASIC Library Design. Application-Specific Integrated Circuits Michael John Sebastian Smith Addison Wesley, 1997. ASIC Library Design. ASIC design is usually performed using a predefined and precharacterized library of cells

Télécharger la présentation

Chapter 3

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Chapter 3 ASIC Library Design Application-Specific Integrated CircuitsMichael John Sebastian Smith Addison Wesley, 1997

  2. ASIC Library Design • ASIC design is usually performed using a predefined and precharacterized library of cells • In designing this library, the original designer had to optimize speed and area without knowing the actual application that the cells will be used for - i.e., how large a load they will be driving • wire load • fanout load • Being aware of the source and effect of these trade-offs will make it easier to understand how to optimally design using the library cells

  3. Model of CMOS Inverter with Parasitic Resistances and Capacitances Figure 3.1 A model for CMOS logic delay. (a) A CMOS inverter with load capacitance. (b) Input and output waveforms showing the definition of falling propagation delay tPDF. (c) The switch model of the inverter showing parasitic resistances and capacitances.

  4. Effect of Load Capacitance on Inverter Performance Figure 3.3 Simulation of an inverter driving a variable number of gates on its output

  5. Parasitic Capacitances of a CMOS Transistor Figure 3.4 Transistor parasitic capacitance. (a) An N-channel MOS transistor with gate length L and width W. (b) The components of the gate capacitance. (c) Approximating capacitances with planar components. (d) The components of the diffusion capacitance. (e)-(h) The dimensions of the gate, overlap, and sidewall capacitances.

  6. CMOS Inverter: Steady State Response V V DD DD R Pon V = V OH DD V V = 0 out V OL out V = f(R , R ) R M Non Non Pon RNonµ 1/WN V = V V = 0 in DD RPonµ 1/WP in Figures from material provided with Digital Integrated Circuits, A Design Perspective, by Jan Rabaey, Prentice Hall, 1996

  7. CMOS Inverter VTC Figures from material provided with Digital Integrated Circuits, A Design Perspective, by Jan Rabaey, Prentice Hall, 1996

  8. The Ideal Gate Vm = Vdd/2 Figures from material provided with Digital Integrated Circuits, A Design Perspective, by Jan Rabaey, Prentice Hall, 1996

  9. Balanced CMOS Inverter Assume that due to differences in mp and mn, for a minimum sized transistor, Rp = 2Rn For abalanced inverter we want RP = RN, so in this case, WP must be 2WN WP/LP = 2/1 WN/LN = 2/1

  10. Logical Effort Figure 3.8 Logical effort. (a) The input capacitance looking into the input capacitance of a minimum size inverter. (b) Sizing a logic cell’s transistors to have the same delay as a minimum size inverter. (c) The logical effort of a cell is Cin/Cinv.

  11. Logical Effort Of a Complex Gate Figure 3.10 An AOI221 cell with logical effort vector g=(8/3, 8/3, 7/3).

  12. to other gates (fanout) to other gates (fanout) The Basic Trade-off Which is faster? to other gates (fanout) buffer to other gates (fanout)

More Related