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EE235 Carbon Nanotube Flash Memory Devices

EE235 Carbon Nanotube Flash Memory Devices. Volker Sorger. Motivation. Symptom. Source. Robert Chau et. al, Intel Novel-Device-Group, IEEE Nanotech. 2005 . G.; Fazio, A.; Mills, D.; Reaves B. Intel Technology J. Q4’97. Memories for Mobility. Non-volatile = low power needed

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EE235 Carbon Nanotube Flash Memory Devices

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  1. EE235Carbon Nanotube Flash Memory Devices Volker Sorger

  2. Motivation Symptom Source Robert Chau et. al, Intel Novel-Device-Group,IEEE Nanotech.2005 G.; Fazio, A.; Mills, D.; Reaves B.Intel Technology J.Q4’97

  3. Memories for Mobility • Non-volatile = low power needed • power down to save power • Low cost • one memory for program & data storage • ≠magnetic hard disk • Small form factor & light in weight

  4. Future Perspectives of Non-volatile Memory

  5. CNT- Memory - Nanocrystals tox=5nm Id ‘1’ ‘0’ Vg Fit to  t=800s @ 300K Y. Zhang, APL, 2005

  6. CNT- Memory – Si/SiO2 interface traps M. Radosavljevic, Nano Lett., 2002 Lack the ability to engineer Device parameters

  7. CNT Molecular Memory • Idea similar to floating gate Flash memory Control Gate Gate Oxide Floating gate tox~ 9 nm Vsd~ 5 – 8 V S D = ‘hot’ electrons Control gate, Vp ~ 8V S D Vsd= 0 V Vp = 1 – 4 V Control Gate Low static & dynamic Power

  8. Reversible switching & Multi-bit Programming

  9. Single electron discharging @ 4.2 K APL 82, 1787 (2003)

  10. charge dot (Rdot) Pd Pd CNT SiO2 p++ Si Results  Sensitivity 0e 1e 2e Channel conductance vs. the gate voltage dCNT~1.0nm, Lch=200nm, tbot=110nm, Rdot=0.3nm, Qdot=0,1e,2e Vsd=0, VG=0.2V • Collaboration with • Y. Zhang – Intel • Jing Guo - Florida U. Vth  0.28V per electron

  11. Conclusion • Multi-bit programmable • Single electron sensitivity at low T • Low power consumption • Integration (?) ~~~ Thank you for you attention ~~~

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