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INTEGRATED CIRCUITS

INTEGRATED CIRCUITS. Dr. Esam Yosry. Lec . #4. Introduction Ion Implantation Process Advantages Compared to Diffusion Disadvantages Compared to Diffusion Implantation Doping Profiles Compared to Diffusion Implantation Doping Profiles Parameters Multiple Implant Process

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INTEGRATED CIRCUITS

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  1. INTEGRATED CIRCUITS Dr. EsamYosry Lec. #4

  2. Introduction • Ion Implantation Process • Advantages Compared to Diffusion • Disadvantages Compared to Diffusion • Implantation Doping Profiles Compared to Diffusion • Implantation Doping Profiles Parameters • Multiple Implant Process • Ion Implantation Technology Ion Implantation

  3. Introduction(Chip Fabrication Cycle)

  4. Introduction(Processes) • Oxidation • Diffusion • Ion Implantation • Deposition • Etching • Lithography • Deposition • Removal • Patterning • Modification of electrical properties

  5. Ion Implantation Process • Ion Implantation: is a method of introducing impurities in a controlled manner into wafer. • Dopant ions are accelerated by a high electric field and directed at the substrate. • They enter the crystal at high kinetic energy, collide with host atoms, gradually lost energy and finally come to rest at some depth.

  6. Ion Implantation Process • Room Temp process. • High energy ion bombardment (10 - 500 KeV) • The penetration depth and dopant profile are be controlled by the accelerating electric field.

  7. Advantages compared to Diffusion • Better control on profile Amount of dose and profile (position and area) are accurately obtainable. • Broad range of doping levels 1011– 1018cm-3 By low doping we can make fine tune the values of some electrical parameters. • Arbitrary doping profile Placing the peak anywhere under the wafer surface.

  8. Advantages compared to Diffusion • Low contamination • Shallow depths with uniform profiles • Low temperature processing The growth of masking oxide layer is no longer needed. Also low temperature processing allows us to maintain the shape of any previously introduced profiles. • Less lateral dopant diffusion Dopant ions have no momentum in the horizontal direction.

  9. Disadvantages compared to Diffusion • Only for shallow junctions • Incident ions damage the semiconductor lattice • Silicon damage (anneal at 500 - 1000oC) • Very expensive and complex equipment • Profiles can have tails (channeling) • 1 wafer at a time vs. up to 200 for diffusion • Long processing time

  10. Implantation Doping Profiles Compared to Diffusion Projected range (mean penetration depth) Higher implantation energy Ξ deeper penetration Rp and wider distribution ∆ Rp Standard deviation

  11. Implantation Doping Profiles Compared to Diffusion

  12. Implantation Doping Profiles Compared to Diffusion

  13. Implantation Doping Profiles Parameters

  14. Implantation Doping Profiles Parameters

  15. Example • A boron dose of 1x1013 cm-3 is implanted into 5x1015 cm-3 n-type Si at 100 kev. Find the junction depth. • Solution • From charts for B into Si at 100 kev, one gets Rp=0.3µ • and ∆Rp=0.07µ • Npeak=0.4x 1013/0.07x10-4 = 5.7x1017cm-3

  16. Multiple Implant Process • Fairly flat, deep dopant profiles can be made by multiple implants of different energies.

  17. Ion Implantation Technology

  18. Thanks Many thanks to Prof. Hany Fikry and Prof WaelFikry for their useful materials that help me to prepare this presentation.

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