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高功率紫外光氮化鋁銦鎵發光二極體之研製 100-2622-E-006-024-CC3

高功率紫外光氮化鋁銦鎵發光二極體之研製 100-2622-E-006-024-CC3. Reporter : 成大微電子所張守進 合作企業 : 新世紀光電 email: changsj@mail.ncku.edu.tw. 2 nd half 2000’s General Lighting (“SUPER” LED ?). 2000’ s Illumination Color + White HB + HP LED. 90’ s Displays (Full-Color HB LED). 80’ s Signs (Multi-Color LED).

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高功率紫外光氮化鋁銦鎵發光二極體之研製 100-2622-E-006-024-CC3

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  1. 高功率紫外光氮化鋁銦鎵發光二極體之研製100-2622-E-006-024-CC3高功率紫外光氮化鋁銦鎵發光二極體之研製100-2622-E-006-024-CC3 Reporter :成大微電子所張守進 合作企業 : 新世紀光電 email: changsj@mail.ncku.edu.tw

  2. 2nd half 2000’s General Lighting (“SUPER” LED ?) 2000’sIllumination Color + White HB + HP LED 90’s Displays (Full-Color HB LED) 80’sSigns (Multi-Color LED) 70’sIndicators (DIM LED) White

  3. Applications of high-brightness LEDs • Signaling • Indicators (lamp, numeric,…) • Automotive (interior, exterior) • Traffic lights • Display (indoor/outdoor) • Illumination • Backlighting • Sign & decorating lighting • Specialty lighting (flashlight,...) • General illumination (2-5 more years)

  4. Applications of high-brightness LEDs LED Lighting in demo. room Landscape lighting Colored light in sign Colored light in display window Large-area outdoor display

  5. 可見光LED:中國大陸大量擴產 供過於求,利潤低 (Lighting??) UV LED:技術門檻相對高 (large leakage current, poor crystal quality)  Niche

  6. Application of UV LEDs • UV Curing • Bio • Synthesis of Vitamin D • Free-Space Communications • …….

  7. Introduction : High Power UV LED Technology Luminus Devices (390 nm) Nichia (385 nm) Enfis (395 nm module) LedEngin (365 nm) SETI (240 – 400 nm) • Characteristically narrow, well-defined output

  8. Ni/Au semi-transparent layer Mg:GaN n-electrode Ti/Al/Ti/Au Mg:Al0.15Ga0.85N InGaN/GaN MQW Si:GaN Al2O3 nucleation layer Ni/Au semi-transparent layer Mg:GaN n-electrode Ti/Al/Ti/Au Mg:Al0.15Ga0.85N InGaN/AlGaN MQW Si:GaN Al2O3 nucleation layer In0.05Ga0.95N/GaN MQW  In0.05Ga0.95N/AlGaN MQW

  9. Poor quality for In0.05Ga0.95N/Al0.18Ga0.82N MQW

  10. ΔE1 ΔE2 Al0.1Ga0.9N= 3.781 eV In0.05Ga0.95N= 3.394 eV GaN=3.42 eV Energy band diagram

  11. Experiment • Buffer layer: • MOCVD AlN buffer • Sputtering AlN buffer p-GaN MQW n-GaN • Advantage for Sputtering AlN buffer: • Easy to Growth • Time Saved • Better quality • Better Uniformity Sapphire Substrate

  12. (002) And (102) XRD spectra of GaN with high temperature PVD AlN and LT GaN buffer on flat sapphire substrate FWHM 381.7 FWHM 76.3 450.7 233.8 (002) (102)

  13. (002) And (102) XRD spectra of GaN with high temperature PVD AlN and MOCVD AlN buffer on patterned sapphire substrate 002 Rocking Curve 102 Rocking Curve FWHM Sputter:239.9 MOCVD:349.9 FWHM Sputter:240.9 MOCVD:429.9

  14. I-V characteristics of UV LEDs with sputtered AlN nucleation layer (a) forward I-V and (b) reverse I-V characteristics of GaN-based UV LEDs. Here the “ESAN” and “IGN” stand for the ex-situ sputtered AlN and the in-situ GaN nucleation LED, respectively.

  15. Relationship of emission wavelength and 20mA output power of UV LEDs with and without AlN nucleation layer Measured light output power as a function ofthe entire emission peak wavelength of UV LEDs. The Inset is the output power enhancement ratio of ex-situ AlN nucleation to in-situ GaN nucleation at 20 mA.

  16. Reliability of the UV LEDs with AlN nucleation layer power output (a) and reverse leakage current (b) reliabilities of UV LEDs with in-situ GaN nucleation and ex-situ sputtered AlN nucleation.

  17. Summary • Use Al0.1Ga0.9N quantum barrier to replace • conventional GaN barrier  • better crystal quality, lower leakage current, improve LED performances • Use sputter AlN nucleation layer  • high productivity, better crystal quality, improved LED performances

  18. 新世紀光電 http://www.gpiled.com/web/pages/products/gv-x

  19. Thank You Q&A?

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