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Outline

Outline. Different cases for ENC calculations (slide2) Data for kapton cables (slide 3-4) Data for silicon sensors (slide 6,7 ). ENC Calculations ( two cases). Case 1 small sensors (2.2cm) + large Cables (50 cm) Case 2

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Outline

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  1. Outline Different cases for ENC calculations (slide2) Data for kapton cables (slide 3-4) Data for silicon sensors (slide 6,7 )

  2. ENC Calculations ( two cases) • Case 1 • small sensors (2.2cm) + large Cables (50 cm) • Case 2 • big sensors ( daisy chain of three 6.2cm*6.2cm sensors with a zigzag for one corner strip) + small cables (5cm) As for the case of big sensors we have daisy chain like structure and we assume at least one zigzag for the corner strip that means the total resistance will be for 18cm+6cm=24cm large sensor same for the capacitance ZigZag in a daisy chain structure

  3. Structure of CBM kapton cable C12 C1G C3G Ground

  4. Data for kapton cables • Case 1: for present design of CBM kapton cables • Trace width = 46 um • Trace height = 14um • No.of signal layers = 2 • No.of metal traces per signal layer = 512 (so the total no.of traces in one cable = 1024 as in case of sensors) • Metal = aluminum • Total capacitance (i.e capacitance of one trace w.r.t. all others) = 0.95pF/cm • Intertrace capacitance contribution for signal layer 1 like C12 = 0.139 pf/cm • Intertrace capacitance contribution for signal layer 2 like C34 = 0.119 pf/cm • Intertrace capacitance contribution for signal layer 1 with signal layer2 like C24 = 0.139 pf/cm • Capacitance of one trace from signal layer 1 to ground (C1G) = 0.29 pF/cm • Capacitance of one trace from signal layer 2 to ground (C3G) = 0.38pF/cm • Resistance of each aluminum metal trace = 0.44 Ω/cm

  5. Data for kapton cables • Case 2: for kapton cables with smaller metal traces • Trace width = 16 um • Trace height = 8um • No.of signal layers = 2 • No.of metal traces per signal layer = 512 (so the total no.of traces in one cable = 1024 as in case of sensors) • Metal = copper • Total capacitance (i.e capacitance of one trace w.r.t. all others) = 0.60pF/cm • Intertrace capacitance contribution for signal layer 1 like C12 = 0.06pf/cm • Intertrace capacitance contribution for signal layer 2 like C34 = 0.05 pf/cm • Intertrace capacitance contribution for signal layer 1 with signal layer2 like C24 = 0.072 pf/cm • Capacitance of one trace from signal layer 1 to ground (C1G) = 0.25 pF/cm • Capacitance of one trace from signal layer 2 to ground (C3G) = 0.31 pF/cm • Resistance of each aluminum metal trace = 1.31 Ω/cm

  6. Data for silicon sensors with stereo angle +-7.50 (CBM03) • Sensor size = 6.2cm*6.2cm • No.of strips = 1024 • Strip pitch = 58μm • Metal strip width ( on both n+ and p+side)= 18μm • Implant strip width ( for both n+ and p+ side)= 20μm • Capacitance to ground CB = 0.19pF/cm • Capacitance to neighbours @10KHz • CI for n+ side = 1.4pF/cm • CI for p+ side = 0.8pF/cm • Coupling capacitance CC = 14pF/cm • Interstrip resistance • RI for n+ side = 1000 MΩ • RI for p+ side = 1000 MΩ • Implant resistance • For p+ = 66 KΩ/cm • For n+ = 44 KΩ/cm • Metal trace resistance for both p+ and n+ side ( PLEASE CONSIDER TWO CASES FOR THIS ) • CASE 1 ( according to our measurements in GSI) = 21 Ω/cm • CASE2 (according to the data send by Li Long) = 50 Ω/cm

  7. Data for silicon sensors with orthogonal strips (CBM02) • Sensor size = 1.5cm*1.5cm • No.of strips = 256 • Strip pitch = 58μm • Metal strip width ( on both n+ and p+side)= 18μm • Implant strip width ( for both n+ and p+ side)= 20μm • Capacitance to ground CB = 0.1 pF/cm • Capacitance to neighbours @10KHz • CI for n+ side = 1.4 pF/cm • CI for p+ side = 0.8 pF/cm • Coupling capacitance CC= 14 pF/cm • Interstrip resistance • RI for n+ side = 1000 MΩ • RI for p+ side = 1000 MΩ • Implant resistance • For p+ = 66 KΩ/cm • For n+ = 44 KΩ/cm • Metal trace resistance for both p+ and n+ side ( PLEASE CONSIDER TWO CASES FOR THIS ) • CASE 1 ( according to our measurements in GSI) = 21 Ω/cm • CASE2 (according to the data send by Li Long) = 50 Ω/cm

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