1 / 20

Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese

Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese. Work in progress within the Bari group. ISS specs and directions. Develop a solid state 64 pixel probe for g -ray imaging. Energy of the g photon : 140 keV. Event rate: 4 kHz. Probe area: 22mm x 22mm.

sachi
Télécharger la présentation

Front-end electronics for silicon detectors F. Corsi, C. Marzocca, G. Matarrese

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Front-end electronics for silicon detectorsF. Corsi, C. Marzocca, G. Matarrese Work in progress within the Bari group Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  2. ISS specs and directions • Develop a solid state 64 pixel probe for g-ray imaging. • Energy of the g photon : 140 keV. • Event rate: 4 kHz. • Probe area: 22mm x 22mm. • Spatial res.: <2 mm. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  3. Si detectors • Avalanche photo detectors; • good energy res. : ENC/M; • a portion of the leak. curr is increased by M; • high sensitivity of M to Vsupply and to T (2.5% /°C): diff. bias requirements; • poor linearity for charge measurement appl. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  4. Si detectors • Silicon drift detectors; • good energy res. (low anode cap.); • good linearity (depending on det. design); • suitable for probe application; • leakage current (cooling); • double face processing. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  5. Si detectors • PIN diodes; • acceptable energy res. (dep. on Ileak and CD.); • exc. linearity; • low fab. cost; • active pixels; • simple readout scheme. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  6. (ENC/M) Si detectors: ENC vs sh. time (Fiorini) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  7. 0.9 mm 1st DESIGN of PIN + JFET structure (1999): PIN Diode Area = 0.32 mm2 ; JFET’s W/L = 200/12 mm. Tethrode, or double-gate JFET configuration: two separate front-gate / back-gate (p-well) contacts. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  8. 2nd DESIGN of PIN + JFET structure: Size = 1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/6 Smaller JFET cap + integrated feed-back and injection capacitors + p-stop floating ring (to reduce parasitic guard ring Cap) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  9. other layout of PIN + JFET structures: 1800 x 900 m2 , Diode Area = 0.8 mm2, W/L=100/4 Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  10. Character. of PIN diodes by IRST • eff. act. area.: 3mm2; • peak wav.: 550nm; • resp. @ 550nm: 0.37A/W; • Quantum eff. @ 550nm: >80%; • Ileak < 50pA; • CD=1pF; • Cut-off freq.:110 MHz. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  11. Provis. design assumptions • PIN diodes (active area+interc.); • Segmented scint.: 5000 vis.ph/g ph; • 2000 - to - 4000 el./g ph/det. pix.; • FE ARCH.: CSA+SH.+LATCH.- DISC.; • ENC <150 e- r.m.s. (Ileak=50pA, CD+Cbond=1.2 pF); Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  12. 2 thresh. latched . discr. Front-End structure Analogue Front-End C f Test Input Shaper Delay line g m 2nd Ord. C o C C i d Detector Shaper_out CSA_out from trigger circuitry to fast-or circuitry Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  13. to PC Probe architecture Read-out clock: fck=160kHz Trigger from fast OR circuitry 2nd lev. 1st lev. to PC Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  14. Probl. in deep sub-m. tech. • Stat. fluctuations of the FE performances. • Mismatch problems beween circuit replicas (both intra-chip and inter-chip) at extr. low currents. • Need of a robust design of the circuitry against process par. fluctuations. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  15. CSA solutions • Adaptive Ileak canc. (Krummenacker); Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  16. CSA solutions (cont’d) • Adaptive P-Z canc. (Rehak et al.) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  17. Adaptive Vfp bias Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  18. Adaptive Vfp bias Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  19. Some exp. result on the adaptive P-Z CSA • CSA in 0.8 mm CMOS for SDD (spectroscopy) External shaper Internal shaper (adaptive pole-zero canc.) Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

  20. Provisional conclusions and workplan • Preliminary experiments with A250 (Amptek) FE; • use of the adaptive P-Z CSA; • design and fab. of first prototypes of CSA in deep submicron CMOS; • electr. and stat. characterization of prot’s. Workshop on the Applications of Compton Camera - Baia delle Zagare, 5-7 settembre 2002.

More Related