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Nanoscale Dopant Pile-up near Semiconducting Oxide Surfaces Explained Edmund G. Seebauer , University of Illinois a

Nanoscale Dopant Pile-up near Semiconducting Oxide Surfaces Explained Edmund G. Seebauer , University of Illinois at Urbana-Champaign, DMR 1005720. Goal : to control concentration and movement of defects in semiconducting ceramics using surfaces

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Explainededmund g - PowerPoint PPT Presentation

Nanoscale Dopant Pile-up near Semiconducting Oxide Surfaces Explained Edmund G. Seebauer , University of Illinois a