'Impurity band' diaporamas de présentation

Homo-junction InGaAs Band-to-band Tunneling Diodes

839 views • 40 slides

Unbiased Numerical Studies of Realistic Hamiltonians for Diluted Magnetic Semiconductors.

Unbiased Numerical Studies of Realistic Hamiltonians for Diluted Magnetic Semiconductors. Adriana Moreo Dept. of Physics and ORNL University of Tennessee, Knoxville, TN, USA. Collaborators: Y. Yildirim, G. Alvarez and E.Dagotto. Supported by NSF grants DMR-0443144 and 0454504.

583 views • 39 slides

Optical Properties of Ga 1-x Mn x As

Optical Properties of Ga 1-x Mn x As. C. C. Chang, T. S. Lee, and Y. H. Chang Department of Physics, National Taiwan University Y. T. Liu and Y. S. Huang Department of Electronics, National Taiwan University of Science and Technology J. Furdyna

577 views • 38 slides

Theory of ferromagnetic semiconductor (Ga,Mn)As

494 views • 37 slides

Homogeneous Semiconductors

Homogeneous Semiconductors. Dopants Use Density of States and Distribution Function to: Find the Number of Holes and Electrons. Energy Levels in Hydrogen Atom. Energy Levels for Electrons in a Doped Semiconductor. Assumptions for Calculation.

335 views • 31 slides

Jason Kaszpurenko Journal Club Feb. 3, 2011

Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Alberi, et all , Phys Rev B 2008. Jason Kaszpurenko Journal Club Feb. 3, 2011. Overview. Motivation Anticrossing Bandgap calculations Mobility Conclusion. Motivation.

220 views • 15 slides