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Chemical Mechanical Planarization of TEOS SiO 2 for Shallow Trench Isolation Processes on an IPEC/Westech 372 Wafer Pol

Chemical Mechanical Planarization of TEOS SiO 2 for Shallow Trench Isolation Processes on an IPEC/Westech 372 Wafer Polisher. Michael Aquilino Microelectronic Engineering Department Rochester Institute of Technology EMCR 801: MicroE Graduate Seminar October 17, 2005. Outline. STI vs. LOCOS

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Teos nitride pad oxide - PowerPoint PPT Presentation

Chemical Mechanical Planarization of TEOS SiO 2 for Shallow Trench Isolation Processes on an IPEC/Westech 372 Wafer Pol