'Volume inversion' diaporamas de présentation

Recent Development of FinFET Technology for CMOS Logic and Memory

Recent Development of FinFET Technology for CMOS Logic and Memory. Chung-Hsun Lin EECS Department University of California at Berkeley. Outline. Why FinFET FinFET process Unique features of FinFET Mobility, workfunction engineering, corne r effect , QM, volume inversion Issues

5.5k views • 71 slides

Nanowire Size Dependency on TSNWFET

210 views • 8 slides

Twin Silicon Nanowire Field Effect Transistor (TSNWFET)

Twin Silicon Nanowire Field Effect Transistor (TSNWFET). EE235 Presentation By: Rhesa Nathanael. Nanowire FET. Motivation: Superior gate control (minimize short channel effects). High drive current. Less sensitive to process variations. Improved transport property.

469 views • 8 slides