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Emerging Memory Technologies

Emerging Memory Technologies. Sudhanva Gurumurthi http://www.cs.virginia.edu/~gurumurthi. Solid State Drive (SSD). Hard Disk Drive (HDD). The Transistor. If the voltage applied at the gate > a threshold voltage , a conducting channel forms between the source and drain. Flash Memory.

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Emerging Memory Technologies

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  1. Emerging Memory Technologies Sudhanva Gurumurthi http://www.cs.virginia.edu/~gurumurthi

  2. Solid State Drive (SSD) Hard Disk Drive (HDD)

  3. The Transistor If the voltage applied at the gate > a threshold voltage, a conducting channel forms between the source and drain

  4. Flash Memory • Floating Gate Transistor (FGT) • Has a “floating gate” between the gate and the channel that issurrounded by SiO2 • Removing the voltage on the gate leaves the induced charges on the floating gate • Non-Volatility

  5. Tunneling Quantum mechanics provides for wave-particle duality Image Source: http://www.bun.kyoto-u.ac.jp/~suchii/Bohr/tunnel.html

  6. Flash Cell Wearout • Writing and erasing flash cells is bad! Write Erase - - - - - - - - - - - - - - - - - - - - - Floating-Gate Transistor State After Write State After Erase

  7. Impact on Retention Time Charge trapping increases Stress Induced Leakage Current (SILC) Time to Leak Time to Leak - - - - - - - - - - - - - - Memory cell state at time ‘t’ Memory cell state after retention period

  8. Boosting Flash EnduranceComputed for a Flash Cell Using Our Model

  9. Magnetic Tunnel Junctions • If tunnel barrier is thin enough, electrons can tunnel from one ferromagnet to the other • Electrical resistance of the MTJ depends on the orientation of the fields on the two plates Image Source: Wikipedia

  10. Data Representation in an MTJ Used in Magnetic RAM (MRAM) and Spin Transfer-Torque RAM (STT-RAM) Image Source: http://www.mdm.imm.cnr.it/SPAM3/background.html

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