1 / 2

sapphire

P. P. P- GaN (7 ×10 17 cm -3 ). P- GaN (7 ×10 17 cm -3 ). In 0.2 Ga 0.8 N / p- GaN MQW. 0.2um. 0.2um. In 0.2 Ga 0.8 N / p- GaN MQW. 20nm. n- GaN. n- GaN. N. N. three of middle : p- GaN barriers. undoped nucleation GaN. undoped nucleation GaN. 4.5um. 4.5um.

zalika
Télécharger la présentation

sapphire

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. P P P-GaN (7 ×1017 cm-3) P-GaN (7 ×1017 cm-3) In0.2Ga 0.8N / p-GaN MQW 0.2um 0.2um In0.2Ga 0.8N / p-GaN MQW 20nm n-GaN n-GaN N N three of middle: p-GaN barriers undoped nucleation GaN undoped nucleation GaN 4.5um 4.5um sapphire sapphire n-Al 0.07Ga 0.93N HBL (5×1018 cm-3 ) (5×1018 cm-3 ) 50nm 50nm structure C structure D Fig. 1. LEDs with p-type doped barriers but without an EBL (structure C), and non-EBL LEDs with p-type doped barriers and a HBL (structure D).

  2. Structure A、B、C、D結構差異表

More Related