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TGA+DTA Aluminum nitrate + ammonium nitrate + Urea

TGA+DTA Aluminum nitrate + ammonium nitrate + Urea. Thermal image ZTO combustion precursors (250°C Hotplate). 0 sec. 1 sec. 2 sec. 3 sec. ZTO combustion precursors (high fuel loading). 0 sec. 1 sec. 2 sec. 3 sec. 4 sec. Precursor ratio.

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TGA+DTA Aluminum nitrate + ammonium nitrate + Urea

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  1. TGA+DTA Aluminum nitrate + ammonium nitrate + Urea

  2. Thermal image ZTO combustion precursors (250°C Hotplate) 0 sec 1 sec 2 sec 3 sec ZTO combustion precursors (high fuel loading) 0 sec 1 sec 2 sec 3 sec 4 sec

  3. Precursor ratio 1/37M Indium isopropoxide (350°C, 4h annealing) 0.01M Zn acetate 0.05M Zn acetate 0.02M Zn acetate 0.07M Zn acetate

  4. Precursor ratio 0.04M Indium isopropoxide + Zinc 2-methoxyethoxide (350°C, 4h annealing) 0.01M Zn acetate 0.05M Zn acetate 0.02M Zn acetate 0.07M Zn acetate

  5. Electrical characteristics • Semiconductor/metal interface • - I-V measurement • 1) Temperature dependency • 2) Metal dependency • Semiconductor/Gate insulator interface • - C-V measurement • Process development • - Ion implantation • - E-beam irradiation

  6. Electrical characteristics I-V measurement in cryogenic chamber Contact resistance vs. temperature Band bending calculation Trasnsport mechanism - Field emission - Thermionic field emission - Thermionic emission

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