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類比積體電路設計 _2

類比積體電路設計 _2. Chapter 2 Basic MOS Device Physics. MOS Device Structure. NMOS and PMOS with Well. MOS Symbols. MOS Channel Formation. I/V Characteristics. I/V Characteristics. I/V Characteristics (cont.). I/V Characteristics (cont.). Operation in Triode Region.

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類比積體電路設計 _2

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  1. 類比積體電路設計_2 Chapter 2Basic MOS Device Physics

  2. MOS Device Structure

  3. NMOS and PMOS with Well

  4. MOS Symbols

  5. MOS Channel Formation

  6. I/V Characteristics

  7. I/V Characteristics

  8. I/V Characteristics (cont.)

  9. I/V Characteristics (cont.)

  10. Operation in Triode Region

  11. Operation in Active (Saturation) Region

  12. Active Region (cont.) Active Region

  13. Transconductance, gm

  14. Triode and Active Region Transition Active Active

  15. Threshold Voltage and Body Effect

  16. No Body Effect With Body Effect Threshold Voltage and Body Effect (cont.)

  17. Channel Length Modulation L L’

  18. Channel Length Modulation (cont.)

  19. Subthreshold Conduction

  20. MOS Layout

  21. Device Capacitances

  22. Layout for Low Capacitance

  23. G-S and G-D Capacitance

  24. MOS Small Signal Models

  25. Bulk Transconductance, gmb

  26. Gate Resistance

  27. MOS Small Signal Model with Capacitance

  28. C-V of NMOS

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