acton
PRESENTED BY
29 SLIDES
1.02K VUES
360 LIKES

類比積體電路設計 _2

DESCRIPTION

類比積體電路設計 _2. Chapter 2 Basic MOS Device Physics. MOS Device Structure. NMOS and PMOS with Well. MOS Symbols. MOS Channel Formation. I/V Characteristics. I/V Characteristics. I/V Characteristics (cont.). I/V Characteristics (cont.). Operation in Triode Region.

1 / 29

Télécharger la présentation

類比積體電路設計 _2

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. 類比積體電路設計_2 Chapter 2Basic MOS Device Physics

  2. MOS Device Structure

  3. NMOS and PMOS with Well

  4. MOS Symbols

  5. MOS Channel Formation

  6. I/V Characteristics

  7. I/V Characteristics

  8. I/V Characteristics (cont.)

  9. I/V Characteristics (cont.)

  10. Operation in Triode Region

  11. Operation in Active (Saturation) Region

  12. Active Region (cont.) Active Region

  13. Transconductance, gm

  14. Triode and Active Region Transition Active Active

  15. Threshold Voltage and Body Effect

  16. No Body Effect With Body Effect Threshold Voltage and Body Effect (cont.)

  17. Channel Length Modulation L L’

  18. Channel Length Modulation (cont.)

  19. Subthreshold Conduction

  20. MOS Layout

  21. Device Capacitances

  22. Layout for Low Capacitance

  23. G-S and G-D Capacitance

  24. MOS Small Signal Models

  25. Bulk Transconductance, gmb

  26. Gate Resistance

  27. MOS Small Signal Model with Capacitance

  28. C-V of NMOS

More Related