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Drain

Drain. Vg. V D. G. Source. V S. W. S. D. N. N. L. B. P. Vg. טרנזיסטור MOS. Source. Drain. V S. V D. P. N. N. G. S. D. I DS. B. Vg 4 >Vg 3. Vg 3 >Vg 2. Vg 2 >Vg 1. Vg 1 >V T. V DS. Trans-Resistor = Transistor. P-MOS. Vg. Vg. Source. Drain. Source. Drain. G.

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Drain

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  1. Drain Vg VD G Source VS W S D N N L B P

  2. Vg טרנזיסטור MOS Source Drain VS VD P N N

  3. G S D IDS B Vg4>Vg3 Vg3>Vg2 Vg2>Vg1 Vg1>VT VDS Trans-Resistor = Transistor

  4. P-MOS Vg Vg Source Drain Source Drain G VS VS VD VD N P P S D P N N B Channel=P G S D B N-MOS Channel=N Source of Electrons Source of Holes

  5. Vg Source Drain VS VD IDS Vg>VT P N N VDS 1.5V 2. VDS=Vg 5V עלינו לקחת בחשבון את מפל המתח בתעלה וירידת מטען האינוורסיה לכוון השפך 0V 0V 5V 7V 3V 0V אזור ללא מטען שנופל עליו כל המתח מעל 5V

  6. 5V מתח בתעלה 0V 5V 3V 0V y x 1.5V 2. 0V

  7. IDS Vg>VT VDS תחומי עבודה רוויה לינארי

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