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www.forth.gr

www.forth.gr. ACTIVITIES of PEML. Performing the growth of metal oxide thin films onto various substrates Growth process optimization for particular thin film applications Structural, Optical, Electrical, Mechanical, Chemical characterization Material design for passive and active coatings

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www.forth.gr

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  1. www.forth.gr

  2. ACTIVITIES of PEML • Performing the growth of metal oxide thin films onto various substrates • Growth process optimization for particular thin film applications • Structural, Optical, Electrical, Mechanical, Chemical characterization • Material design for passive and active coatings • Testing and optimization of prototype sensors

  3. Growth and Characterization • Metal-oxide film production (InOx, SnOx, ZnOx and doped) • physical vapor deposition systems • dc reactive magnetron sputtering • metal evaporator • Electrical characterization • DC / AC • Optical characterization (off and on-line) • UV/VIS Spectrophotometer (scan range 200-900nm) • FTIR 50-8000 wave numbers • Structural characterization • Thickness measurement • X-Ray Diffraction • Electron Microscopy (SEM, TEM) • Atomic Force Microscopy (AFM)

  4. DC Reactive Magnetron Sputtering • Alcatel sputtering two-target system with in-situ thickness monitor • UHV chamber • target dimensions: 150mm diam.  6mm thick. Variation of deposition parameters  film properties: • Substrate temperature (RT-500ºC) • Plasma power • Partial gas pressure (O2, Ar)

  5. Group Activities Photoreduction and oxidation of a 60-nm-thick InOx film deposited at room temperature • Metal-Oxide Film Production & Characterization • Optical image of a transducer Interdigitated structures of a SAW device

  6. Group Activities • Metal-Oxide Film Production & Characterization • Targets for sputtering • Zn , In, Sn(pure) • ZnAl2 (2% Al-doped Zn) • MetallicZnIn5 (5% In-doped Zn) • ZnAl1.5 (1.5% Al-doped Zn) • ZnSnAl 30/1.2 (30% Sn-doped and 1.2%Al-doped Zn) • ZnO (pure) • ZAO2 (2% Al2Ο3-doped ZnO) • ZAO2D (2% Al2Ο3-doped and 1000ppm Si doped ZnO) • Ceramic ZAO5 (5% Al2Ο3-doped ZnO) • TiO (pure) • TiO:NbO (30% Nb2O5-doped TiO)

  7. Group Activities • Metal-Oxide Film Production & Characterization • High quality transparent thin films for sensing and architectural applications • Controlled growth: • Controlled oxygen-argon atmosphere • Sputtering parameters: film thickness, substrate temperature, total pressure, partial pressures of Ar and O2, O2­/Ar concentrations, growth rate, plasma parameters (current/voltage) • various substrates

  8. HIGHLIGHT of RESULTS The dynamic response of the InOx films towards nitrogen dioxide at an operating temperature of 200ºC.

  9. HIGHLIGHT of RESULTS • High conductivity changes under UV-exposure, reductive-oxidative gases. • Gas Sensor for NO2, NO, O3 in the sub-ppm range • Low operating temperature applications. • Sensor for oxidant VOC’s Schematic illustration of the apparatus used for the photoreduction and oxidation procedures of InOx films Typical photoreduction-oxidation conductivity curve for InOx thin films.

  10. HIGHLIGHT of RESULTS Electron Probe Micro Analysis (EPMA) In:O atomic ratio as a function of depth in the near surface region derived from SIMS-depth profiles

  11. HIGHLIGHT of RESULTS High transparent coatings (e.g. 2%Al doped ZnO) #484 RMS=0.906 nm Very smooth surfaces: Sub-nanometric RMS

  12. HIGHLIGHT of RESULTS Active coatings: titania TiO, 100nm, 0,195nm RMS • Extremely smooth Surfaces (see Z-Range: <4nm!), Roughness below 1nm • Amorphous • Film Resistances ~1010 Ω/cm2 • Highly Transparent ~85% • TiO and TiO:NbO films exhibit Hydrophobicity and Hydrophilicity under UV Exposure

  13. NetworkAnalyzer fo BW = 2f0 / NP BW IDT Frequency Response IDT Frequency Response

  14. HIGHLIGHT of RESULTS SAW devices Ozone Sensing Properties of InOx

  15. Projects / Funding • HPRN - CT2002 - 00298, 2002-2006 "Photon Mediated Phenomena" 110 K€ • RTD CEC project No ENK^-CT-2002-00678, 2002-2006 "3 rd Generation Large Area Coatings"   3 rd Gen LAC 275K€ • Marie Curie,   MRTN-CT-2003-504826, 2003-2007 "Advanced Methods and Tools for Handling and Assemply in Microtechnology" "ASSEMIC" 223K€ • Greek Australian (RMIT) 66K€ • Greek Romanian (NIM) 25K € • PENED 132K€

  16. Group composition • Ass. Prof.G. Kiriakidis • Dr. D. Dovinos (SAW design) • S. Christoulakis (growth/electrical/UV-VIS/XRD) • K. Moschovis (growth/electrical/SAW’s) • M. Suchea (material design/characterization- AFM/SEM/Optical/Contact Angle) • G. Kenanakis (XRD/electrical/sensing) • P. Horvath (mechanical properties) • G. Kortidis (applications) • V. Tudose (surface chemistry/sensing)

  17. People

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