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ITRS 2002 Environmental, Safety and Health Update

ITRS 2002 Environmental, Safety and Health Update. December 4, 2002 – Tokyo, Japan. ESH THRUST CHANGES FOR 2002. Nearly all table requirements for 2002 remain unchanged from 2001 ITRS Changes: ESH Impact assessments modified to eliminate “acceptable risk”

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ITRS 2002 Environmental, Safety and Health Update

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  1. ITRS 2002 Environmental, Safety and Health Update December 4, 2002 – Tokyo, Japan

  2. ESH THRUST CHANGES FOR 2002 • Nearly all table requirements for 2002 remain unchanged from 2001 ITRS • Changes: • ESH Impact assessments modified to eliminate “acceptable risk” • PFOS-based materials restrictions identified and non-PFOS EUV resist development added

  3. T 83 ESH I R — N - ( ) ABLE A NTRINSIC EQUIREMENTS EAR TERM CONTINUED Year of Production 2001 2002 2003 2004 2005 2006 2007 DRIVER Dram 1/2 Pitch (nm) 130 115 100 90 80 70 65 Design for ESH (DFESH) Common Algorithm to Environmental load/impact assessment Common Algorithm to identify, Was Case Study identify, access, and (LCA) access, and accept risk accept risk Environmental load/impact assessment Is Common Algorithm to identify and assess risk (LCA) Common Algorithm to Common Algorithm to identify, Chemical Risk Assessment (Health and Was Case Study identify, access, and access, and accept risk Safety) accept risk Chemical Risk Assessment (Health and Is Common Algorithm to identify and assess risk Safety) New Pollutant release, and transfer disclosure materials PRTR data acquisition system (PRTR) and restrictions White-Manufacturable Solutions Exist and are Being Optimized Yellow-Manufacturable Solutions are Known Red-Manufacturable Solutions are NOT Known • Change Number 1 Material Balance Common Test Methods, Protocol, and Application Regulatory Requirements Collection of requirements, guidelines, policy trends, and others

  4. Change Number 2 Year of Production 2001 2002 2003 2004 2005 2006 2007 Driver DRAM ½ Pitch (nm) 130 115 100 90 80 70 65 Lithography Minimal ESH Impact for non-ionizing Characterization of ESH Was radiation, ergonomics, chemical EUV Impacts consumption, and disposal Is EUV Add EUV Non-PFOS PAG for EUV Resist Minimal ESH Impact for new chemicals, Characterization of ESH Was purification requirements, wastes, and New Materials Impacts emissions Is New Materials Was Reduced Identification of PFOS applications PFOS Alternatives feature size Identification of PFOS PFOS Alternatives for non- Is PFOS Alternatives for critical uses* applications critical uses* Add *Critical uses of PFOS includes use in a photomicrolithography process to produce semiconductors or similar components of electronic or other miniaturized devices” as a: –Component of a photoresist (including PAGs and surfactants) –Component of an anti-reflective coating Table 84a Chemicals, Materials and Equipment Management Technol ogy Requirements — Near - term

  5. ESH Thrust Planning for 2003 • Define ESH principles in terms of technology requirements • Conduct mapping of technical thrust requirements and ESH • Align technical and ESH performance drivers • Expand ESH tool set and incorporate in ITRS as required

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