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Design and development of thin double side silicon microstrip sensors for CBM experiment

Design and development of thin double side silicon microstrip sensors for CBM experiment. Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University. 1-st CBM - Russia - JINR Collaboration Meeting May 19-22 , 2009 , Dubna , Russia.

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Design and development of thin double side silicon microstrip sensors for CBM experiment

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  1. Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  2. 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  3. Sensor Geometry • According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity - 40 • 60 mm2 • Strip pitch for both sides - 58 μm • Stereoangle - ±7.5о • Number of stripson both sides - 1024 • Number of readout chips for both sides - 8 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  4. Sensor N-side Contact Pads 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  5. N-side poly-Si resistors 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  6. N-side p-stops configuration 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  7. N-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  8. Sensor P-side 1st and 2nd metal 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  9. Sensor P-side 1st and 2nd metal details 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  10. P-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  11. Results • Number of masks: • N-side – 8 • P-side – 9 • Estimated production time - 3 months + 1 month for masks production. 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  12. Expected • Full Depletion Voltage (FDV) - <50 V • Working voltage –70 - 250V • Dark current at 100 V – < 15 nА/см2 • AC capacitance - >10 pF/см • Capacitors breakdown voltage - >170 V • Bias resistor value - 1.0 ± 0.4 MOhm • Number of bad strips - <0.5%/side 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  13. Last • This work have been done within CBM-MPD STS Consortiumand supported by ISTC, see Yu. Murin presentation 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

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