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HDPCVD 技術資料

HDPCVD 技術資料. 1. System Maker : Applied Materials.Inc 2. System Model : Centura 5200 3. Serial Number : 35605-03 4. Mainframe : Ultima HDP MF w/Multi-Slot 5. Load Lock : Nerrow Body 6. Wafer Size : 200mm SNNF 7. Chamber Type & Quantity : Chamber : A =Ultima Plus Chamber : D = DxZ

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HDPCVD 技術資料

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  1. HDPCVD技術資料

  2. 1. System Maker : Applied Materials.Inc 2. System Model : Centura 5200 3. Serial Number : 35605-03 4. Mainframe : Ultima HDP MF w/Multi-Slot 5. Load Lock :Nerrow Body 6. Wafer Size : 200mm SNNF 7. Chamber Type & Quantity : Chamber : A =Ultima Plus Chamber : D = DxZ 8. Other Chambers :Ch#E (MSCD) Ch#F Orienter 9. RF Generator : ETO Generator, RFG-2000-2V 10. RPC :MKS - AX7670 11. Robot Type : HP Robot 12. Turbo Pump : EBARA – ET1600W

  3. Chamber “A” HDP (HDP 1.0K), Temperature < 400℃ Depo Rate

  4. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ Thickness [ Chamber “A” HDP (Thickness Spec : 1000Å ± 50Å) ]

  5. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ within/wafer U% Chamber “A” HDP PE-OX-1.0K,< 400 Deg

  6. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ 連續製程wafer to wafer U% Chamber “A” HDP ( HDP-1.0K-R, < 400 Deg )

  7. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ ‘N’ Value Chamber “A” HDP ( ‘N’ Value Spec : 1.465 ± 0.015 )

  8. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ Wafer Temperature

  9. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ Depo Rate Chamber “A” HDP ( HDP-1.0K-R, < 600℃ ± 50℃)

  10. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ Thickness 7-2-2. Chamber “A” HDP (Thickness Spec : 1000Å ± 50Å)

  11. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ within/wafer U% Chamber “A” HDP ( HDP-1.0K-R, 600℃ ± 50℃)

  12. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ 連續製程wafer to wafer U% Chamber “A” HDP ( HDP-1.0K-R, 600℃ ± 50℃)

  13. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ N’ Value Chamber “A” HDP ( ‘N’ Value Spec : 1.465 ± 0.015 )

  14. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature 600 ℃ ± 50 ℃ Wafer Temperature

  15. Chamber “D” DxZ (SiO2 1.0K) Depo Rate Chamber “D” DXZ ( PE-OX-1.0K )

  16. Chamber “D” DxZ (SiO2 1.0K) Thickness Chamber “D” DXZ ( PE-OX-1.0K )

  17. Chamber “D” DxZ (SiO2 1.0K) within/wafer U%： Chamber “D” DXZ ( PE-OX-1.0K )

  18. Chamber “D” DxZ (SiO2 1.0K) 連續製程wafer to wafer U% Chamber “D” DXZ ( PE-OX-1.0K )

  19. Chamber “D” DxZ (SiO2 1.0K) ‘N’ Value Chamber “D” DXZ, SiO2 ( ‘N’ Value Spec : 1.465 ± 0.015 )

  20. Chamber “D” DxZ (SiO2 1.0K) Wafer Temperature

  21. Chamber “D” DxZ (PE-SiN 1.0K) Depo Rate Chamber “D” DXZ ( PE-NIT-1.0K-R )

  22. Chamber “D” DxZ (PE-SiN 1.0K) Thickness Chamber “D” DxZ Si3N4( Thickness Spec : 1000Å ± 50Å )

  23. Chamber “D” DxZ (PE-SiN 1.0K) within/wafer U%： Chamber “D” DXZ ( PE-NIT-1.0K-R )

  24. Chamber “D” DxZ (PE-SiN 1.0K) 連續製程wafer to wafer U% Chamber “D” DXZ ( PE-NIT-1.0K-R )

  25. Chamber “D” DxZ (PE-SiN 1.0K) ‘N’ Value Chamber “D” DxZ ( ‘N’ Value Spec : 2.02 ± 0.03 )

  26. Chamber “D” DxZ (PE-SiN 1.0K) Wafer Temperature

  27. C/V(K/value)-1 高密度電漿製程腔體 k for HDP400-Oxide ~ 3.99 k for HDP600-Oxide ~ 4.16

  28. C/V(K/value)-2 高沈積率製程腔體 k for PE-Oxide ~ 4.13 k for PE-SiN ~ 7.88

  29. 填洞能力-1(Gap Fill,Via)

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