1 / 11

Challenges in ARPES for Electronic Band Dispersion Analysis in Ultra-High Vacuum

Explore the challenges in ARPES electronic band dispersion analysis using ultra-high vacuum conditions. Discuss techniques like electronic structure resolution and temperature control. Learn about doping effects on materials like Bi2Te3 and Bi2Se3.

bhoffman
Télécharger la présentation

Challenges in ARPES for Electronic Band Dispersion Analysis in Ultra-High Vacuum

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. ARPES Electronic band dispersion (E vs k) Challenges Ultra High Vacuum (Surface + Analyzer) EM Noise (Surface + Analyzer) Temperature – 15K (Analyzer) Light Source

  2. ARPES Electronic band dispersion (E vs k)

  3. Electronic structure Resolution: ΔE < 16 meV Δk < 0.012 (1/A) PRB 87, 075113 (2013)

  4. Doping

  5. Aging of undopedBi2Te3

  6. SCIENCE 329 659-662 (2010)

  7. Band structureBi2Se3 In gap Dirac point

  8. Magnetic Doping (Fe)

  9. Magnetic Doping (Mn)

More Related