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ARPES

ARPES. Electronic band dispersion (E vs k). Challenges Ultra High Vacuum (Surface + Analyzer) EM Noise (Surface + Analyzer) Temperature – 15K (Analyzer ) Light Source. ARPES. Electronic band dispersion (E vs k). Electronic structure. Resolution: Δ E < 16 meV Δk < 0.012 (1/A).

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ARPES

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  1. ARPES Electronic band dispersion (E vs k) Challenges Ultra High Vacuum (Surface + Analyzer) EM Noise (Surface + Analyzer) Temperature – 15K (Analyzer) Light Source

  2. ARPES Electronic band dispersion (E vs k)

  3. Electronic structure Resolution: ΔE < 16 meV Δk < 0.012 (1/A) PRB 87, 075113 (2013)

  4. Doping

  5. Aging of undopedBi2Te3

  6. SCIENCE 329 659-662 (2010)

  7. Band structureBi2Se3 In gap Dirac point

  8. Magnetic Doping (Fe)

  9. Magnetic Doping (Mn)

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