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High-Resolution Imaging of Quantum Dots on Silicon Surface Near 260/280 nm Range

This study presents high-resolution imaging of quantum dots (QDs) on a silicon (Si) surface within the 260/280 nm range. Utilizing advanced techniques, we explore the spatial distribution and size consistency of particles observed in proximity to gold posts. The imaging reveals various layers, including top, middle, and lowest boxes, located at characteristic distances, highlighting the significance of these findings for nanoscale applications. Our results contribute to the understanding of QDs' behavior on silicon substrates, paving the way for innovations in semiconductor technology.

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High-Resolution Imaging of Quantum Dots on Silicon Surface Near 260/280 nm Range

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  1. reference frame 260 (or 280, etc) 260 A B C D E F 7x 6x 5x 4x 3x 2x top 130nm 110nm BOX 90nm middle 1 2 3 4 5 6 70nm 50nm lowest 30nm

  2. A1 B1 260 - middle box B2 B2 B3 C3 B4

  3. B1 C1 B1 260 middle box upper left corner is A1 all here 260 middle box B1

  4. 260 lowest box C2 260 lowest box B1 C1 C2 260 lowest box

  5. B1 280 middle box B2 B1 B2 B1

  6. area between gold posts showing Si surface with particles consistent in size with qdots in the vicinity of 260/280

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