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Setup and Testing of Silicon Detector in Prague: Innovations and Developments

This document outlines the advancements in silicon detector testing setup at Charles University, Prague. It highlights the completion of ATLAS SCT module production, the renovation of the clean room for detector research and development, and the installation of a “black box” with a cooling system and environment monitoring. Key features include new electronics and GPIB communications for precise control of laser tests, allowing for accurate 2D and 3D motion system functionality. Ongoing developments in software for laser operations are also discussed, promising improved precision and efficiency in future simulations.

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Setup and Testing of Silicon Detector in Prague: Innovations and Developments

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  1. Progress in Silicon Detector Testing Setup in Prague Charles University Peter Kodyš, Zdeněk Doležal, Pavel Řezníček, Zbyněk Drásal, Jan Brož, Pavel Bažant, Daniel Scheirich

  2. Clean room: • ATLAS SCT module production finished • Cleaning and rearrangement of the clean room for general detector R&D • Installation of “black box” including: • Cooling system with monitoring in range +20 to -20 in chiller • Gas pipes (dry air, Nitrogen, other) • Environment monitoring: temperature, pressure • Microscope moved into the box • 2D - position system moved in to box • New electronics in clean room: NIM and CAMAC modules (VME was there from production tests) • Installation of communication via GPIB protocol on PC

  3. Laser Tests: • 2D motion system is installed and controlled from PC (step 5x10mm) • GPIB communication with oscilloscope is done to read special statistics and data to PC automatically • GPIB communication with generator is done to set laser pulse shape from PC automatically • All devices are controlled from ROOT environment • New 3D motion system was ordered (expected in November - 1x1x1mm precision) • Software for basic operations on laser tests is under development • Time setting of laser pulse with precision 1 ns and better • Simulations of laser in Si

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