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n-Doping of Organic Electronic Materials using Air-Stable Organometallics Antoine Kahn, Princeton University, DMR 1005892. Stable 2x18e dimer. E a = 0.23 eV. (a).

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  1. n-Doping of Organic Electronic Materials using Air-Stable OrganometallicsAntoine Kahn, Princeton University, DMR 1005892 Stable 2x18e dimer Ea = 0.23 eV (a) The development of organic electronics into commercially viable technologies requires advances in materials that allow relatively simple and inexpensive processing methods for device manufacturing. Compatibility to ambient or controlled atmosphere conditions is exceedingly desirable. This work focuses on the use of a new class of air-stable rhodium- or ruthenium-based organometallic dimers, such as rhodocene or pentamethyl rhodocene, which, upon splitting (figure (a)) form two highly reducing 19-electron monomers that act as powerful n-type dopants in a variety of organic semiconductors (OSC). Several different air-stable dimers were synthesized and shown to be compatible with vacuum- or solution-processing, and able to efficiently n-dope OSCs with electron affinity as low as 2.6 eV. These compounds were used to successfully n-dope vacuum-deposited films of small molecules like copper phthalocyanine, C60 fullerene or pentacene, or solution-processed polymers like P(NDI2OD-T2) (figure (b)) or TIPS-pentacene. 2 x highly reducing 19e monomers (b) 106 times Ea = 1.19 eV G. Song, S.-B. Kim,S. Mohapatra, Y. Qi, T. Sajoto, A. Kahn, S.R. Marder, S. Barlow, Adv. Mat. 24, 699 (2012) Y. Qi, S. Guo, T. Sajoto, S.B. Kim, S. Mohapatra, S. Barlow, S.R. Marder, and A. Kahn, Appl. Phys. Lett.100, 083305 (2012)

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