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Playing with High Voltage to optimize the regime

This study explores optimizing high voltage settings for Gas Electron Multipliers (GEMs) with and without CsI, focusing on gain slopes, saturation in efficiency, and voltage configurations between GEMs. The measurements show lower voltage differences across GEMs, leading to a new configuration with voltages in GEM gaps. The data presentation includes comparisons of total voltage and voltage distribution across each GEM at different settings.

evan-jimenez
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Playing with High Voltage to optimize the regime

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Presentation Transcript

  1. Playing with High Voltage to optimize the regime Check that GEM with CsI and without have the same Gain slope Vary HV only through one GEM

  2. Additional check that there is saturation in collection efficiency between GEM1 and GEM3. The only difference from previous measurements – lower dV across each GEM from 497 to 437, one by one.

  3. There is no saturation on the gap from the last GEM to pads

  4. Checking new possible configuration Put voltages in gaps between GEMs 800/800/1600 V. All GEMs dV=497 V “Nominal” 500/500/1000 V. All GEMs dV=497 Then scan with new regimes as would it be with resistor divider. On both plots are the SAME data vs. different parameters: total voltage on top of top GEM; Voltage across each GEM

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