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Wireless System Technologies

Wireless System Technologies. Prof. Lih-Tyng Hwang Institute of Communications Engineering, Department of Electrical Engineering Oct 15, 2010. Carving New Paradigms. The future is 3D: Radically changing the world of entertainment, and beyond. ASE Group 2010 ECTC. The Personal Nerve Center.

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Wireless System Technologies

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  1. Wireless System Technologies Prof. Lih-Tyng Hwang Institute of Communications Engineering, Department of Electrical Engineering Oct 15, 2010

  2. Carving New Paradigms The future is 3D: Radically changing the world of entertainment, and beyond ASE Group 2010 ECTC

  3. The Personal Nerve Center Creating scalable, integrated, multifunctional controls and mediums that fit Wireless lifestyles: Connecting Ubiquitous Computing to Cloud (internet) 輕，薄，短，小，長電池壽命: Heavy Demands On Device and Packaging Engineering ASE Group 2010 ECTC

  4. Semiconductor Life Cycles Life Sciences? • Intelligent appliances • Bio-medical • Green energy Improvement of Life Experience Information • Search engine • Info service • Machine-to-machine Communication • Connectivity • Bandwidth • People-to-people WW Cell Phone PR – 52% PC • CPU • Memory • Storage WW PC PR – 17% 2008 1980 2005 1985 1990 2000 2010 2015 1995 ASE Group 2010 ECTC

  5. Do We Have a Choice? • Our Life and Culture is being altered NOW …. • Communications • Cell Phones • Smart Phones (iPad) • Total Mobility and Multi-media • 4G: WiMax and LTE (both (OFDMA) • Many Apps lead to Social Engineering • the use of Google YouTube, Facebook (defining Friends, Products, and Companies; Candidates are using it • where TV meets with Search Engine and Google Map, beside Skype, Facebook, etc.. • Have you ever wondered what make it all possible? • Communications Engineering • System Technologies • Embedded Architecture • Miniaturized Hardware Design and Integration Google TV or Apple iPad? All in your Palm

  6. Multiplexing Techniques BPSK, QPSK, QAM, GMSK OFDM Do you know how to transmit 54 mbps using a 20 MHz bandwidth? Spread Spectrum DS-SS CDM FH-SS Multiple Access Techniques Frequency Division Multiple Access Analog Phones Motorola started (StarTac, Razr) Time Division Multiple Access Nokia came up with a better battery life digital version Code Division Multiple Access Qualcomm, a fabless company makes money from CDMAIC and IP CDMA iPhone in 2011 Space Division Multiple Access (for WiFi 802.11n) Antenna Diversity MIMO Communications Engineering

  7. Wireless System Technologies • Introduction • Cellular, Consumer Electronics, and PC are driving forces • Apple: iPhone, iPod, and Macbook • Cellular demands more Functionalities and easier User interface • Email, Web, Map, Facebook, GPS, and Touch-screen, in addition to Industrial Design • Our focus: Cognitive Sensing devices that combines Personal Connectivity (MobileMe) and Wireless Sensor Network using 3D RF SiP hardware platform • Embedded System Drivers for Wireless Devices • Headset, Z-Sensor, Z-Reader, TagSensor • Personal Connectivity • Bluetooth, WiFi, and GPS • Wireless Sensing • RFID and Zigbee • Use Cases and Embedded smart – Algorithm development • Interference/Coexistence • MIMO Control and Programming • 3D SiP Hardware Design and System Integration • Brief History + Why SiP? • What’s new in 3D? • Signal and Power Integrity and Co-design • Shielding • On-Module Antenna • MIMO Antennas Macbook iPod iPhone In 2009, 1.4 B units of cellular phones are manufactured

  8. Reasons for 3D Integration • Why 3D ? • Industry is looking beyond Moore’s • Transistor counts double every 18-24 months • More importantly, the gate lengths are approaching the physical limits of 16 nm manufacturing (5nm gate length), which could come as soon as 2013 to 2018 (Intel 2003). • Getting too expensive to continue to shrink • 3D IC or 3D Integration seen as a strategy to extend the performance (density) set by the Moore’s Law.

  9. Fundamental Package Designs organic interposer PBGA (Plastic Ball Grid Array) Lead frame package Variations: TSSOP, MSOP, QFN Variations: FC-CSP, WL-CSP QFN WL-CSP QFN (Quad Flat No Leads)

  10. Wire bonded die Die attach adhesives For high-powered applications, the die is usually eutectic bonded onto the package, using e.g. gold-tin or gold-silicon solder (for good heat conduction). For low-cost, low-powered applications, the die is often glued directly onto a substrate (such as a printed wiring board) using an epoxyadhesive. Mold Compound for Encapsulation Epoxy Globtop IC Package Processes - QFN

  11. IC Package Processes - BGA Underfill Needle dispensing Inspection

  12. IC Packaging Materials Source: SOMATECT

  13. Why IC Packages, or Carriers? • Provide Mechanical Rigidity and Heat Sinking • Damages from handling • Crack • ESD • Die pad, die attach (heat sink) • Minimize Electrical Performance Impacts (Degradation) • Signal and Power • Provide testing accessibility

  14. There are Bare die, too? • Yes, there are. • The bare die are not tested. We need to have KGD (Known Good Die); that to screen out the bad die by burn-in tests. • Burn-In tests are to stress the IC (that is, to accelerate the aging of the IC, to get rid of the infant mortality). • Burn-In can be done at the wafer level, or for the individual die. • After removing the infant mortality, what left are KGD. defects Failed by Wear-out Failed by Infant mortality time

  15. Interconnects: Wirebonds • Silicon die pads • Intro to Silicon Interconnects • Al (why? ease of deposition, low rho, good adherence to SiO2) • Diffusion barrier: Ti, W • Cu (why?) • Low-K materials (dk for SiO2=3.9, why?) : spin-on organic polymeric dielectrics: PI (dk=3.2), BCB • Wire bonds (or bond wires) • Ultrasonic vibration • Au (Beryllium), Alloyed Al, and Cu • 1mil (25.4 um) diameter were popular • Au and Al conventional, Cu recent • TiW for diffusion barrier for example, Cu/Al/TiW/Si, Au/Al/TiW/Si • High current applications use Cu • There are two common wire bonding processes: Au ball bonding and Al wedge bonding • Wedge, ball, ribbon bonds • Ribbon for RF operations ball wedge ribbon

  16. Al and Silicon • Because of its properties aluminum and its alloys are widely used for wiring in microchips: • simple to structure in dry etch processes • excellent adhesion on SiO2 and interlayers as BPSG or PSG • low electrical resistance (3 μΩ·cm) • excellent contacting with wire bonds (ie gold and aluminum wires) An alloy of aluminum and silicon can be used (silicon 1–2 %). Because the aluminum now already contains silicon there will be no diffusion out of the substrate. Pure Al (Doped Region) Al metal track Metals like silver or copper have better properties, however, these metals are more expensive and cannot be etched in dry etching this easily.

  17. Wirebond Technology • Used in 3D stacked die • 40-50 um in pitch • Oxidation prevent from Long Storage Life • Intermetallic compounds (Au-Al, for example) are critical to the wirebond reliability • Wirebonder manufacturer:

  18. Gold-Aluminium Intermetallic • A gold-aluminium intermetallic is an intermetallic compound of gold and aluminium that occurs at contacts between the two metals. These intermetallics have different properties than the individual metals which can cause problems in wire bonding in microelectronics. The main compounds formed are Au5Al2 (white plague) and AuAl2 (purple plague), which both form at high temperatures. • White plague is the name of the compound Au5Al2 as well as the problem it causes. It has low electric conductivity, so its formation at the joint leads to an increase of electrical resistance which can lead to total failure. Purple plague is a brittle, bright-purple compound of AuAl2. The process of the growth of the intermetallic layers leads to creation of voids in the metal lattice. 1 Au wire, 2 Purple plague, 3 Cu, 4 Gap, 5, Al

  19. Interconnects: Flip Chip Bumps • C4: controlled collapsed chip carrier • Used Lead (Pb), high melting point; used in IBM ceramic packaging technology • PbSn (Eutectic flip chip bumps) lower M.P.; used in Organic board technology • Lead-free OMPAC 0.25mm pitch Organic or Ceramic FC-BGA Solder balls 0.5mm pitch Melting Temp for Pb60Sn40: 183 °C Melting Temp for Pb95Sn5: 310 °C Peak PCB operating temperature: 220 °C

  20. Al 1. Sputter etch the native oxide to remove oxide and expose fresh aluminum surface. 2. Deposit 100 nm Ti / Cr / Al as the adhesion layer. 3. Deposit 80 nm Cr:CU as the diffusion barrier layer. 4. Deposit 300 nm Cu / Ni:Au as the solder-wettable layer. Cu UBM for Al and Cu Pads Cu/low-K Immersion Gold

  21. UBM Processes Final prepared I/O metal pad Dielectric

  22. Advanced Interconnects • TSV • Chemical Etching thru the silicon; 60-80 um thick • 50um pitch • Microbumps lead free • Eutectic Sn-Au • SnAgCu • 20 -60 um pitch

  23. 3D IC Yole Report

  24. Passives: Embedded and Integrated To reduce the passive component count Embedded Inside the MLO PCB R, L, C models and functional device design PTF (Polymer Thick Film) and copper terminals 35W – MW/□ Dk=21, CFP (Ceramic Filled Polymer) Integrated Passive Devices Matching network for GaAs On top of PCB R, L, C and functional devices Structured as SMD 0306 (30mils x 60 mils) IPD Embedded Integrated Passive Devices Surface Mount Device (R, L,C) Embedded Passive Components, R, C, and L

  25. Motorola Embedded Passives HDI HDI

  26. Motorola EPS • PTF resistor technology allows for multiple inks to be printed on the same layer, thereby covering resistors with values as low as 18W to as much as 10MW. • The capacitance density of 16.8 pF/mm2 (@ 12 micron dielectric thickness) allows, for example, 30 pF capacitors to be embedded in an area less than 2 mm2. The reliability under stress (temp/humidity and LLTC) of the mezzanine capacitors is satisfactory with minimal drift during testing and nearly full recovery after post-bake. • Inductor technology focused mainly on creating 2-turn and 2.5-turn multilayer spiral inductors with the embeddable range up to 22 nH.

  27. SMD Components • Surface mount technology was developed in the 1960s and became widely used in the late 1980s. Much of the pioneering work in this technology was by IBM. SMT is a method for constructing electronic circuits in which the components (SMD, or Surface Mounted Devices) are mounted directly onto the surface of printed circuit boards (PCBs). It has largely replaced the through-hole technology construction method.

  28. Surface mounted devices (SMDs) are usually made physically small and lightweight for this reason. Surface mounting lends itself well to a high degree of automation, reducing labor cost and greatly increasing production rates. Components were mechanically redesigned to have small metal tabs or end caps that could be directly soldered to the surface of the PCB. Components became much smaller and component placement on both sides of a board became far more common with surface mounting than through-hole mounting, allowing much higher circuit densities. SMDs 0.04”×0.02” 0805, 0603, 0402, 0201, 01005 0.08”×0.05” 0.063”×0.031” 0.024”×0.012” 0.016”×0.008”

  29. Advanced Passive Technologies • Embedded passives • R, L, C (Modeling) • Parameterized Models • Balun, Bandpass filters • PCB (organic), LTCC • IPD • R, L, C (Modeling) • Parameterized Models • Use different substrates, Si, Quartz, and glass • Balun, Bandpass filters • Thin-Film, IPDs become Active Device Carriers IMEC Thin Film RF SiP

  30. Thin film technology This technology is a layer of material ranging from fractions of nanometer to several micrometers. The deposition includes Chemical deposition, such as Plating, CVD, PECVD Physical deposition, such as Sputtering, MBE Thick film Technology This technology is based on screen printing and uses “Fired-on” materials for making components. For example, the soldering process, the conductors in LTCC. Steps: Ink preparation Screen printing Dry/Curing Firing Thick Film and Thin Film Technologies

  31. IPD As an Active Device Carrier Turn an IPD into an IAD.

  32. Packaging Configurations using TSVs and Microbumps A. 三維積體電路的信號完整性及電源完整性 Using TSVs, Through Silicon Vias and Microbumps Using Microbumps only • Smaller footprint area • Shorter wire lengths • Better performance • Less interconnect power

  33. Silicon Interposer A. 三維積體電路的信號完整性及電源完整性 Variations

  34. Nested Packaging: 3D SiP A. 三維積體電路的信號完整性及電源完整性 3D-SiP WLAN (Source: IMEC)

  35. 3D Integration: 3D IC and 3D SiP SiPs of Higher Speed, Higher Density, and More Functionalities are achieved thru 3D IntegrationTechnologies Digital SiPs 3D IC More SiP Packaging Configurations are created. RF SiPs

  36. IPD and MIMO Antennas B. IPD 研究 Use Gold Stud Bumps RFIC IPD may consist of the necessary passives, including the antenna Bare WB RFIC (802.11n) with Al pads When IPD consist of an antenna, it is possible to have an active antenna. RFIC • Key Advantages: • Efficient use of silicon, leading to minimal cost; • Better performance because of better material selections • Research on the matched impedance interconnection structures • that facilitate smooth signal propagation

  37. Marvell Reference Design B. IPD 研究 Marvell 88W8786 or 88W8786U Marvell 88W8063 RFIC Front-End Module BB/MAC NSYSU Technology: Using IPD (Task B) to form a FEM with antennas (Task C) USB介面

  38. Example of FEM for 802.11n B. IPD 研究 • SKY65230-11: WLAN 802.11n 2 x 2 MIMO Front-End Module with 3 Antenna Ports • Separate digital controls for each PA • Package size: 10 x 14 x 0.9 mm SKY65230-11 Note: This NSC 產學 project only promises to do 802.11n for 1x1 MIMO.

  39. 具有超穎材料的模組天線設計和組件屏蔽 C. 模組天線設計和組件屏蔽  MIMO antenna and module into one package MIMO Package Isolator MIMO Inter-chip Communications RFIC Isolator RFIC

  40. Shielding Tools C. 模組天線設計和組件屏蔽 • Shielding Tools • Microprobes from Langer EMV-Technik • Shielding Tests for EMI • Shielding among Components • Shielding from the Antenna • Shielding Lid Design • Grounding of the shield structures

  41. Module Level Resolution is about 0.01mm (movement). Validation between Simulated and Measured results For various Transmission Line structures Single ended Differential Extended to Clock and Control Lines Near field and far field measurement Correlation Microprobe near field results Far field measurement using GTEM Chip Level Resolution is much smaller About 1 um and less (movement). So are the prober’s 3 dimensional movement Protection design for the Small E and H probes Small E or H due to small sizes, therefore, an insitu LNA is probably needed (from noise figure consideration) Module and Chip Level EMI-EMC C. 模組天線設計和組件屏蔽 EPZ Ingo Wolff EPXY EPXY

  42. Spectrum analyzer 40 GHz (40 K€) Amplifier 3 GHz 100W (60 K€) Vector Network Analyzer 10 GHz (100 K€) Signal Synthesizer 6 GHz (20 K€) GTEM cell 18 GHz (15 K€) EMC Equipments Main equipments for EMC – typical prices C. 模組天線設計和組件屏蔽 • Expensive …. • Complete EMC laboratory : 500 K€

  43. 6.8 nF 120 Ω Spectrum analyzer IC IC I/O Vss Spectrum analyzer 51 Ω 49 Ω I(t) 1 Ω Emission measurement methods Example of conducted emission measurement set-up C. 模組天線設計和組件屏蔽 • RF current measurement of current return loops • Conducted emission measurement on Vss pins by 1 Ω resistor • Conducted emission measurement on Vdd and I/O pins by 150 Ω impedance

  44. Septum Shielding aperture 1 Far end (to absorb ers W 50 termination) Near end (to receiver) aperture 2 Emission spectrum Emission measurement methods Example of radiated emission measurement set-up in GTEM C. 模組天線設計和組件屏蔽 Chip under test Spectrum Analyzer Pre-amplifier GTEM cell

  45. Hot spots Emission map at one frequency Emission measurement methods Example of near field scan set-up C. 模組天線設計和組件屏蔽 Spectrum Analyzer Data acquisition Scan table Pre-amplifier IC Control positioning Near field probe

  46. MIMO 802.11n Module D. Demo, Part of 總計畫 802.11n with MIMO capability is coming! Design these antennas on an IPD, along with the FEM circuits

  47. Antennasfor Diversity and MIMO D. Demo, Part of 總計畫 • Multi-path Effects can be minimized using OFDM technique • MIMO monitoring circuits? • API-PHY control • T/R • 1T/2R (Upload is usually slower than Download) /2 /2 /4 /2 /4 /2 + + ground plane λ/2|2.45GHz= 61mm Design a module aiming at a size of 32 mm on a side is a challenging task. Using metamaterial for isolation between the two antennas, Is it possible to reduce the 61mm to 32mm?

  48. Marvell is interested in working with us. There are two possible routes: They are evaluating the options. Directly with Marvell in realizing a 802.11n Module Working with Bare die, CSP, and module layout Create module socket Working with an intermediate Taiwanese module company Better in module layout and testing resources Also probably advices on PA selection in MIMO IPD (FEM) Advices on 802.11n reference design and help us on MIMO monitor functions and Antenna control commands (drivers) At the same time, we found RealTek has already a USB 1T2R 802.11n module. We will look into buying one module, and start to learn the MIMO programming. 802.11n Sourcing Report D. Demo, Part of 總計畫

  49. HW and SW for 802.11n D. Demo, Part of 總計畫 • Marvell Bare ICs or CSP ICs • The wire-bond version bare die • We will figure out how to Au stud bumping them • We can pay some 材料費 (for example, a socket tester) • How to flash the stacks (libraries) onto the RFIC? • The bare RFIC has the 802.11n stack? • Marvell Applications Engineer • Reference design (front end module) • Advise our student on programming the MIMO • Taiwanese Companies who might interested in receiving the MIMO integration technology (Marketing) Socket for Module testing and Firmware Flashing

  50. Unigen UGWDR82NUH50based on Realtek 802.11n D. Demo, Part of 總計畫 • IEEE 802.11n draft 2.0 MIMO OFDM • One Transmit and Two Receive paths (1T2R) • 20MHz and 40MHz bandwidth transmission • Short Guard Interval (400ns) • DSSS with DBPSK and DQPSK, CCK modulation with long and short preamble • OFDM with BPSK, QPSK, 16QAM, and 64QAM modulation. Convolution Coding Rate: 1/2, 2/3, 3/4, and 5/6 • Maximum data rate 54Mbps in 802.11g, and 300Mbps in 802.11n • OFDM receive diversity with MRC using up to 2 receive paths. Switch diversity used for DSSS/CCK. • Hardware antenna diversity • Selectable digital transmit and receive FIR filters • Programmable scaling in transmitter and receiver to trade quantization noise against increased probability of clipping • Fast receiver Automatic Gain Control (AGC) Ant1 Ant2

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