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Advanced Magnetic Memory Device with High Switching Probabilities and Multilayer Structure

Explore Singulus DIE 4BR technology featuring AP to P switching, field-reset, and reliable performance with 100 counts at 100% switching probability. This device offers superior quality and efficiency for various applications.

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Advanced Magnetic Memory Device with High Switching Probabilities and Multilayer Structure

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  1. Singulus 6.1.2, DIE 4BR, Row3 Column20, Size 160nm*65nm Hc= 70-75 Oe AP to P switching, Reset by field, 100 counts for each point At 100% Switching Probability Δ=55.26 Sub/3 Ta/40 CuN/3 Ta/40 CuN/3 Ta/10 Ru/5 Ta/15 PtMn/2.5CoFe30/0.85 Ru/ 2.4 Co40Fe40B20/ 0.823 MgO/ 1.8 Co60Fe20B20/2 Cu/5 Ta/ 10 Cu/ 5 Ru/3 Ta

  2. Size 160nm*65nm Rp×A=3.8 Ω*μm2 AP to P switching, Reset by field, 100 counts for each point Sub/3 Ta/40 CuN/3 Ta/40 CuN/3 Ta/10 Ru/5 Ta/15 PtMn/2.5CoFe30/0.85 Ru/ 2.4 Co40Fe40B20/ 0.844 MgO/ 1.8 Co60Fe20B20/2 Cu/5 Ta/ 10 Cu/ 5 Ru/3 Ta

  3. AP-P switching and P-AP switching At 50% Switching Probability Size 130nm*50nm Rp×A=3.5 Ω*μm2 Rap=1500 Ω Rp=690 Ω TMR=117%

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