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Memory Aid “a hairpin is lighter than a frying pan”

light m * (larger d 2 E/dK 2 ). heavy m * (smaller d 2 E/dK 2 ). Memory Aid “a hairpin is lighter than a frying pan”. 1. T=0 o K. T 1 >0. f (E). T 2 >T 1. 0.5. 0. E. E F. f (E) = 1/{1+exp[(E- E F )/ kT ]}. All energy levels are filled with e - ’s below the Fermi Energy at 0 o K.

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Memory Aid “a hairpin is lighter than a frying pan”

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  1. light m* (larger d2E/dK2) heavy m* (smaller d2E/dK2) Memory Aid“a hairpin is lighter than a frying pan”

  2. 1 T=0 oK T1>0 f(E) T2>T1 0.5 0 E EF f(E) = 1/{1+exp[(E-EF)/kT]} All energy levels are filled with e-’s below the Fermi Energy at 0 oK

  3. f(E) 1 T=0 oK T1>0 T2>T1 S(E) 0.5 0 E EV EF EC n(E)=S(E)f(E) E Putting the pieces together:for electrons, n(E)

  4. S(E) Putting the pieces together: for holes, p(E) fp(E) T=0 oK 1 T1>0 T2>T1 0.5 0 E EV EF EC p(E)=S(E)f(E) hole energy

  5. Finding no and po the effective density of states in the conduction band

  6. NA -> NA-ND = NA’ = ppo ND -> ND-NA = ND’ = nno

  7. w=(2εV/qNB)1/2

  8. Lasers

  9. n++ p n+ n+ W L (x) Ec(y) with VDS=0

  10. Increasing VGS decreases EB EB EF ~ EC y 0 L

  11. Band diagram of triode and saturation

  12. Threshold Voltage Definition VGS = VT when the carrier concentration in the channel is equal to the carrier concentration in the bulk silicon. Mathematically, this occurs when fs=2ff , where fsis called the surface potential

  13. Quantum Effects on Threshold Voltage

  14. (Maybe not so good for GaAs!) This is very confusing, because this effective mobility is being used to describe the velocity of carriers when the concept of mobility is not applicable!

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