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1 CHIU-JUNG CHIU, 1 WEN-YIN WENG, 1 SHOOU-JINN CHANG

AlInN nano-islands ammonia gas sensor. 1 CHIU-JUNG CHIU, 1 WEN-YIN WENG, 1 SHOOU-JINN CHANG 1 INSTITUTE OF MICROELECTRONICS & DEPARTMENT OF ELECTRICAL ENGINEERING, CENTER FORMICRO/NANO SCIENCE AND TECHNOLOGY, ADVANCED OPTOELECTRONIC TECHNOLOGY CENTER, NATIONAL CHENG KUNG UNIVERSITY

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1 CHIU-JUNG CHIU, 1 WEN-YIN WENG, 1 SHOOU-JINN CHANG

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  1. AlInN nano-islands ammonia gas sensor 1CHIU-JUNG CHIU, 1WEN-YIN WENG, 1SHOOU-JINN CHANG 1INSTITUTE OF MICROELECTRONICS & DEPARTMENT OF ELECTRICAL ENGINEERING, CENTER FORMICRO/NANO SCIENCE AND TECHNOLOGY, ADVANCED OPTOELECTRONIC TECHNOLOGY CENTER, NATIONAL CHENG KUNG UNIVERSITY 1No.1, University Road, Tainan City 701, Taiwan (R.O.C.) phone: +886-6-275-7575；e-mail: chiujung0501@gmail.com Abstract We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350oC, it was found that measured incremental currents were around 105 μA, 127 μA, 147 μA and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively. KEYWORDS: AlInN, nano-island, gas sensor, ammonia sensor Top-view FESEM image of the AlInN epitaxial layer. The inset shows cross-sectional image of the AlInN layer. Schematic diagram of the fabricated AlInN resistive gas sensor Response of the fabricated AlInN NH3 gas sensor measured with 2000 ppm NH3 gas at various temperatures. Response variation of the AlInN sensor exposed to NH3 gas injection and pumping. Institute of Microelectronic, NCKU, TAIWAN

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