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Corporate and Manufacturing Facilities Located in Houston, TX Production of Polycrystalline Diamond Compacts by HP/HT and Cemented Carbide Inserts by MW Sintering Technology Experts in the Materials and Design for Bits and Components. Research Group.
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Corporate and Manufacturing Facilities Located in Houston, TX Production of Polycrystalline Diamond Compacts by HP/HT and Cemented Carbide Inserts by MW Sintering Technology Experts in the Materials and Design for Bits and Components
Research Group • Located in State College, PA. • MW Technology Transfer Site • MW Sintering Equipment Manufacture
MW Sintering of Cemented WC • Volumetric Heating - Energy Transfer • Sintering Time - Minutes • Shrinkage - Uniform, Original Shape Maintained • Melting - Co • Grain Growth - Minimized • Density - Theoretical • Hardness - Equal or Better than Standards
MW Processes and Equipment • Develop MW Applicators for Sintering Cemented Carbide and Other Materials • Develop Basic Processing Parameters • Manufacture MW Sintering Systems • Service MW Equipment and Processes
MW Sintering Support The V Group - Inventors, Designers, Builders
Schematic of Automated Applicator Crucibles Move from Top to Bottom and to Left
Automated Ejection System Crucibles move down and to the right through load lock.
Production Unit Installed At Manufacturing Location
IMPROVED PROPERTIES OF MW SINTERED WC • FINER GRAIN STRUCTURE • NO GRAIN GROWTH INHIBITORS REQUIRED • UNIFORM COBALT DISTRIBUTION • IMPROVED ABRASION RESISTANCE • IMPROVED EROSION RESISTANCE • IMPROVED CORROSION RESISTANCE • IMPROVED IMPACT STRENGTH • MORE ENERGY EFFICIENT PROCESS • LESS CAPITAL INTENSIVE
MICROGRAPHS at 1500X MICROWAVE SINTERED CONVENTIONALLY SINTERED
IMPROVED EROSION RESISTANCE CONVENTIONALLYSINTERED MICROWAVE SINTERED
IMPROVED IMPACT STRENGTH MW Sintered Sinter-HIP Impact Apparatus
IMPROVED IMPACT STRENGTH MICROWAVE STANDARD
MICROWAVE SINTERED TSD INSERTS ABRASION RESISTANT TSD MICROWAVE SINTERED IN TUNGSTEN CARBIDE DTC PART# 12154 14.4mm DIAM x 12.7mm LONG 3 TSD ELEMENTS 4mmDIA