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This report details the design and fabrication of the 2nd prototype chip for Pittsburgh Digital Greenhouse's high-speed CMOS A/D converter circuit for radio frequency signals by Kyusun Choi from Penn State. The milestones include designing various ADC circuits and layouts, fabricating the 2nd prototype chip, and achieving design goals. The layout designs, chip summary, simulation results, and publications related to the project are discussed in detail. Accomplishments, project goals, and future plans are outlined in the report.
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Quarterly Technical Report III for Pittsburgh Digital Greenhouse High Speed CMOS A/D Converter Circuit for Radio Frequency Signal Kyusun Choi Computer Science and Engineering Department The Pennsylvania State University
Project Goals for This Quarter • Design and Fab 2nd Prototype chip • Design 6 and 8 bit TIQ ADC Circuits • Design 6 and 8 bit ADC Layouts • Design 2nd Prototype Chip • Fabricate 2nd Prototype Chip
Accomplished Project Milestones • Total 10 ADCs are designed (0.18um) • 6bit ADC with L=0.18um and ROM Decoder • 6bit ADC with L=0.50um and ROM Decoder • 6bit ADC with L=1.00um and ROM Decoder • 6bit ADC with L=1.00um and FAT Decoder • 6bit ADC with L=1.00um and Pipeline, ROM • 6bit ADC with L=1.00um and S&H, ROM • 8bit ADC with L=0.50um and ROM Decoder • 8bit ADC with L=1.00um and ROM Decoder • 9bit ADC with L=1.00um and ROM Decoder • 9bit ADC with L=1.50um and ROM Decoder
Accomplished Project Milestones • Layout Design for 10 ADCs, Complete • 2nd Prototype Chip Design, Complete • Chip Fabrication, Submitted: • Submission date: 10/8/2001 • Vendor: MOSIS with TSMC 0.18 m foundry • Expected delivery date: December 2001
2nd Prototype Chip Summary • Die Size: 2.64mm X 2.64mm • 0.18um Digital CMOS Process • Total 56,069 Transistors • 84 Pins, 18 Power pins
Simulation: Speed and Power • Maximum Speed • Designed with TSMC_TT parameter • With linear step from 0.5V to 1.1V • Other processes • MOSIS parameters (5) • TSMC parameters (4) • Power • Analog • Digital
Simulation Results Worst-case delay
Simulation Results • Worst-case delay (input swing: 0 V to 1.8 V) • TSMC_TT (nSec)
Simulation Results • Worst-case delay (input swing: 0.5 V to 1.1 V) • TSMC_TT (nSec)
Simulation Results • DNL and INL • TSMC_TT: 8bit 0.50um
Simulation Results DNL and INL (LSB)
Simulation Results DNL and INL (LSB)
Simulation Summary • 1. High-speed with 0.18 um • Approximately50%higher speed than 0.25um • Process variation problems • 2. Power consumption • Lower power consumption • 3. Chip area • Higher circuit density
URLs for The Reports • Report III • http://www.cse.psu.edu/~chip/pdg/report3.html • Slide : http://www.cse.psu.edu/~chip/pdg/p3.ppt • 2. Report II • http://www.cse.psu.edu/~chip/pdg/report2.html • Slide : http://www.cse.psu.edu/~chip/pdg/p2.ppt • 3. Report I • http://www.cse.psu.edu/~chip/pdg/rp1/report.html • Slide : http://www.cse.psu.edu/~chip/pdg/rp1/p1.ppt
Publications • 1. New Paper Accepted • “Design Method and Automation of Comparator Generation for Flash A/D Converter”, • ISQED 2002 (March) • 2. Previous Paper Published • “A 1-GSPS CMOS Flash Analog-to-Digital Converter for System-on-Chip Applications”, WVLSI 2001 • “Future-Ready Ultrafast 8bit CMOS ADC for System-on–Chip Applications”, • 14th ASIC/SOC 2001
CONCLUSION • Accomplished Milestones: • Total 10 ADCs Designed: 6 bit, 8 bit, and 9 bit ADCs • 2nd Prototype Chip Design • Chip Fabrication, Submitted • MOSIS 10/8/2001 • 0.18 m Digital CMOS • Return: December 2001 • Speed Increased Over 1st Proto Chip • More ADCs on 2nd Proto Chip