1 / 1

C-SPIN IRG2, Oklahoma/Arkansas, DMR-0520550

C-SPIN IRG2, Oklahoma/Arkansas, DMR-0520550. (a). (b). Electronic and Photonic Device Applications for Narrow Gap Semiconductors.

lihua
Télécharger la présentation

C-SPIN IRG2, Oklahoma/Arkansas, DMR-0520550

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. C-SPIN IRG2, Oklahoma/Arkansas, DMR-0520550 (a) (b) Electronic and Photonic Device Applications for Narrow Gap Semiconductors Semiconductors with narrow energy gaps have properties that are advantageous for electronic and photonic device applications. For example, the wavelength range of infrared devices can be widely tuned by strong confinement effects. Accomplishments include demonstration of InAs/AlSb/GaSb interband cascade (IC) lasers with an emission wavelength at 118K of 7.4 mm, which is now the longest wavelength achieved by III-V interband diode lasers. We also demonstrated that the interband cascade concept can be extended to IR detectors and photovoltaic devices. (a) I-V-L characteristics of a plasmon waveguide IC laser operating in cw mode with different heat-sink temperatures. (b) Current density-voltage characteristics of an IC photodetector at 80 K. Inset, photocurrent response spectrum versus wavelength at 80 K.

More Related