1 / 2

Application: magnetic data storage

Application: magnetic data storage. H . Novel New Materials with Colossal Magnetoresistance (CMR) Martha Greenblatt, Rutgers University, DMR-0233697. The change in electrical resistance (  ) of a material in response to a magnetic field (H): MR = (  H -  0 )/  0. T N ~ 110K.

loren
Télécharger la présentation

Application: magnetic data storage

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Application: magnetic data storage H Novel New Materials with Colossal Magnetoresistance (CMR) Martha Greenblatt, Rutgers University,DMR-0233697 The change in electrical resistance () of a material in response to a magnetic field (H): MR = (H - 0)/ 0

  2. TN ~ 110K no interplane tunneling No MR x=0.202D VRH Ca3-xThxMn2O7 : transport properties inter-plane tunneling yields 65 % MR (magnetoresistance)

More Related