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Beam Chopper Development for Next Generation High Power Proton Drivers. Michael A. Clarke-Gayther. RAL / FETS / HIPPI. Outline. Overview Fast Pulse Generator (FPG) Slow Pulse Generator (SPG) Slow – wave electrode designs Summary.
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Beam Chopper Development forNext GenerationHigh Power Proton Drivers Michael A. Clarke-Gayther RAL / FETS / HIPPI
Outline • Overview • Fast Pulse Generator (FPG) • Slow Pulse Generator (SPG) • Slow – wave electrode designs • Summary
HIPPI WP4: The RAL† Fast Beam Chopper Development Programme Progress Report for the period: July 2005 – December 2006 M. A. Clarke-Gayther † † STFC Rutherford Appleton Laboratory, Didcot, Oxfordshire, UK
The RAL Front-End Test Stand (FETS) Project / Key parameters
3.0 MeV MEBT Chopper (RAL FETS Scheme C) 3.2 m ‘CCL’ type re-buncher cavities Chopper 1 (fast transition) Chopper 2 (slower transition)
FETS Scheme A / Beam-line layout and GPT trajectory plots Voltages: Chop 1: +/- 1.28 kV (20 mm gap) Chop 2: +/- 1.42 kV (18 mm gap) Losses: 0.1 % @ input to CH1, 0.3% on dump 1 0.1% on CH2, 0.3% on dump 2
High peak power loads Control and interface Power supply 9 x Pulse generator cards 1.7 m 9 x Pulse generator cards Combiner 9 x Pulse generator cards 9 x Pulse generator cards SPG / Front View
SPG beam line layout and load analysis Slow chopper electrodes Beam 16 close coupled ‘slow’ pulse generator modules
8 kV SPG pre-prototype Test Set-up - 8 kV~ 5 μF LF cap.bank HVdamping resistor 8 kV push-pullMOSFETswitch + 8 kV~ 5 μF LF cap.bank + 8 kV~ 3 nF HF cap.bank - 8 kV~ 3 nF HF cap.bank Two turn load inductance ~ 50 nH Load capacitance ~ 30 pf 6 kV, 400 MHz ÷ 1000 probe Trigger input Auxiliary power supplies Cooling fan
SPG waveform measurement /HTS 81-06-GSM HFB Tr =11.9 ns Tr =15.5 ns Tf =19.7 ns Tf =11.1 ns • SPG waveforms at ± 6 kV peak & 50 ns / div. • SPG waveforms at ± 6 kV peak & 50 ns / div. • SPG waveforms at ± 6 kV peak & 2.0 μs / div. • SPG waveforms at ± 6 kV peak & 50 μs / div.
Prototype 8 kV SPG euro-cassette module / Side view Axial cooling fans Air duct High voltage feed-through (output port) 0.26 m 8 kV push-pull MOSFET switch module Low-inductance HV damping resistors
SPG Development Plan / October 2006 • Bench test 4 kV rated switch • Compare results with existing 8 kV rated switch • Re-formulate specification for SPG • Based on new optical design for FETS • Obtain quotes for a custom designed switch • Based on re-formulated specification for FETS
4kV MOSFET switch (BEHLKE HTS 41-06-GSM-CF-HSB) / Test Set-Up
4kV MOSFET switch (BEHLKE HTS 41-06-GSM-CF-HSB) / Test Set-Up
SPG waveform measurement / HTS 41-06-GSM-CF-HFB (4 kV) Tr =12.0 ns Tr =11.2 ns Tf =10.8 ns Tf =10.8 ns • SPG waveforms at ± 4 kV peak & 50 ns / div. • SPG waveforms at ± 4 kV peak & 50 ns / div. • SPG waveforms at ± 4 kV peak & 2.0 μs / div. • SPG waveforms at ± 4 kV peak & 50 μs / div.
Measured performance parameters / HTS 41-06-GSM-CF-HSB (4kV)
Measured performance parameters / HTS 41-06-GSM-CF-HSB (4kV)
Fast-Slow Chopper / FPG & SPG synchronisation / ESS Timing FPG (0.2 ms/div.) FPG (4.0 μs/div.) SPG (0.2 ms/div.) SPG (4.0 μs/div.)
Fast-Slow Chopper / FPG & SPG synchronisation / ESS Timing FPG (0.2 ms/div.) FPG (4.0 μs/div.) SPG (0.2 ms/div.) SPG (4.0 μs/div.)
Measured performance parameters / HTS 41-06-GSM-CF-HSB (4kV) SPG
Summary / 4 kV SPG development • Transition time and transition time stability are now compliant (just) with four bunch chopping at 324 MHz. • Maximum burst duration at 50 Hz BRF will be tested with an upgraded auxiliary power supply and improved cooling. • Timing stability (jitter) will be tested when the auxiliary power supply and cooling have been upgraded. • The 4kV SPG results are encouraging – particularly the improved transition time and pulse duration stability.
‘E-field chopping / Slow-wave electrode design The relationships for field (E), and transverse displacement (x), where q is the electronic charge, is the beam velocity, m0 is the rest mass, z is the effective electrode length, is the required deflection angle, V is the deflecting potential, and d is the electrode gap, are: Where: Transverse extent of the beam: L2 Beam transit time for distance L1: T(L1) Pulse transit time in vacuum for distance L2: T(L2) Pulse transit time in dielectric for distance L3: T(L3) Electrode width: L4 For the generalised slow wave structure: Maximum value for L1 = V1 (T3 - T1) / 2 Minimum Value for L1 = L2 (V1/ V2) T(L1) = L1/V1 = T(L2) + T(L3)
Strategy for the development of RAL slow–wave structures • Modify ESS 2.5 MeV helical and planar designs • Reduce delay to enable 3 MeV operation • Increase beam aperture to ~ 20 mm • Maximise field coverage and homogeneity • Simplify design - minimise number of parts • Investigate effects of dimensional tolerances • Ensure compatibility with NC machining practise • Identify optimum materials • Modify helical design for CERN MEBT • Shrink to fit in 95 mm ID vacuum vessel
ESS planar and Helical slow-wave electrode designs Planar A Helical B Helical C
Planar structure A 3D cut-away 300 mm
Helical structure B with L - C trimmers and adjustable delay
Helical structure B1 Helical structure B2
Helical structure B1 Helical structure B2
Helical structure B1 Helical structure B2
RAL helical B / Field in x - y plane/ line integrals along z 8.0 mm radius inscribed circle
Selection of coaxial and strip-line dielectric support material
Planar strip-line components / HF simulation Beam aperture 180 degree bend