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Understand the complex device physics of diodes. Learn about the Simplified physical structure, free electrons, and thermal ionization process in diodes. Explore the SPICE diode model. Practice determining rDS, ro, Vt for MOS-FET transistors like IRF510.
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At 0 K, all bonds are intact and no free electrons are available for current conduction.
At room temperature, some of the covalent bonds are broken by thermal ionization. Each broken bond gives rise to a free electron and a hole, both of which become available for current conduction.
A silicon crystal doped by a pentavalent element. Each dopant atom donates a free electron and is thus called a donor. The doped semiconductor becomes n type.
Opgave: Bestem rDS , ro , Vt og for MOS-FET transistoren: IRF510