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Basic MOSFET I-V characteristic(1/3)

Basic MOSFET I-V characteristic(1/3). High circuit operation speed large I ON small Subthreshold Slope (SS) Low power consumption small I OFF (Silicon-on-insulator or Fully deplete device). Basic MOSFET I-V characteristic(2/3). Linear region drain current Large I ON

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Basic MOSFET I-V characteristic(1/3)

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  1. Basic MOSFET I-V characteristic(1/3) • High circuit operation speed large ION small Subthreshold Slope (SS) • Low power consumption small IOFF (Silicon-on-insulator or Fully deplete device)

  2. Basic MOSFET I-V characteristic(2/3) • Linear region drain current • Large ION small L (technology node)  14nm large mobility  Ge , strained channel large COX (small EOT)  High-K metal gate

  3. Basic MOSFET I-V characteristic(3/3) • Subthreshold slope (SS) the applied gate voltage difference when ION has increases one order • Low large Cox (low EOT) small CD (high channel doping or FINFET)

  4. CMOS Technology Trend • Current Si-based technology scaling innovations • Mobility booster: Uniaxial Compressive Strain  SiGe S/D for p-FET • Gate leakage reduction: High-k / Metal Gate • Short Channel Effect suppression: FinFETs 2009 • High mobility substrate: • —Ge 22nm 2011 FinFETS

  5. Characteristics of (111) Ge n+/p Diodes • The high resistivity substrates have ideality factor (~ 1.1) but low on/off ratio. • The high on/off ratio ~ 105 of low resistivity substrates is probably due to the reduction of diffusion current. 5 5

  6. Transfer and Output Characteristics of (111) Ge n-MOSFET • The S.S. is ~140mV/decade with on/off ratio ~ 8×104 for Is. • Ideal output characteristics 6 6

  7. Effective Electron Mobility of (111) Ge n-MOSFET • Thepeak mobility reaches 2200 cm2/V-s owing to the suppression of Coulomb scattering using low doping Ge substrates. • As substrate doping concentration increases, lower electron mobility is observed. 7 7

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