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Thickening Rate of SiO 2

Thickening Rate of SiO 2. 半導體專題實驗期末報告 第十組 電機四 B93901007 許恭銓 電機四 B93901148 王彥翔. The diamond structure of Si. Planes that are concerned. Actual Photographs. 100 110 111. Molecular arrangements. Molecular density. (100): (110): (111):

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Thickening Rate of SiO 2

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  1. Thickening Rate of SiO2 半導體專題實驗期末報告 第十組 電機四 B93901007 許恭銓 電機四 B93901148 王彥翔

  2. The diamond structure of Si

  3. Planes that are concerned

  4. Actual Photographs • 100 • 110 • 111

  5. Molecular arrangements

  6. Molecular density • (100): • (110): • (111): • Thus here the molecular density is (110) > (100) > (111)

  7. Si crystal orientation

  8. Si crystal orientation (cont.)

  9. Distance between layers • (100): • (110): • (111): • Hence the distance between two layers: (110) > (111) > (100) • Thus if the oxidation rate on each plane, concerning the molecular density, is not the dominant factor, the rate of thickening the oxide should be fastest for plane (110).

  10. Paper research • “Journal of The Electrochemical Society” • Silicon Orientation Effects in the Initial Regime of Wet Oxidation • http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JESOAN000149000008000F98000001&idtype=cvips&gifs=yes

  11. Paper research • Silicon Orientation Effects in the Initial Regime of Wet Oxidation • J. Electrochem. Soc., Volume 149, Issue 8, pp. F98-F101 (August 2002) • Julie L. Ngau,aPeter B. Griffin,b and James D. Plummerb • aDepartment of Materials Science and Engineering and • bDepartment of Electrical Engineering, Stanford University, Stanford, California 94305

  12. Paper research • Atmospheric pressure, wet oxidation, ~785 degrees Celsius • Initially, (110) > (111) > (100). Eventually, (111) > (110) > (100).

  13. Paper research • The upper figure depicts the overall information in the experiment. • The lower figure shows the result of the first 150 minutes in the experiment.

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