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Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni

Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni Cellules Solaires Photovoltaïques Plastiques, POMA – CNRS, Université d’Angers. Transistors Mémoires Transistors ambipolaires. 50’. Nonvolatile Data Storage Nondestructive data readout Single Transistor type memory cell.

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Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni

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  1. Transistors organiques ambipolaires J.-M. Nunzi, A. Pandey, N. Unni Cellules Solaires Photovoltaïques Plastiques, POMA – CNRS, Université d’Angers • Transistors Mémoires • Transistors ambipolaires 50’

  2. Nonvolatile Data Storage Nondestructive data readout Single Transistor type memory cell Organic Field Effect Transistors FET Type FeRAM • Low temperature processing • Compatibility with plastic substrates • Applications : • Active matrix displays • Low cost logic circuits • Smart cards Unni et al., Appl Phys Lett 2004

  3. Structure Pentacene / active material Polyvinylidene fluoride-Trifluoroethylene / gate insulator Gold & ITO / contacts P(VDF-TrFE) Pentacene

  4. Experimental Details • ITO coated glass slides as substrates • P(VDF-TrFE) spin coated • Pentacene evaporated • Gold source & drain electrodes • Channel length 120µm • Channel width 0.5mm

  5. How does a MISFET works ? Vds Energy Dielectric D S CB -Gate Voltage Semiconductor EF G VB Vgs

  6. Transistor characteristics of a pentacene FET with P(VDF-TrFE) as gate insulator

  7. |Id,sat|0.5vs.Vg µFET = 2.6 x 10-3 cm2s-1V-1 Threshold voltage = -17.4 V

  8. How does a MFS-FET works ? Vds Energy Ferroelectric D S CB Vg = 0 Semiconductor + + + + EF G VB Vgs=0

  9. ON OFF Comparison of drain currents at Vg = 0, before and after writing with –50 V

  10. FET ambipolaire

  11. Fct. Canal P Fct. Canal N

  12. Caractéristiques ON/OFF µh= 9.10-2 cm2V-1s-1 µe= 10-2 cm2V-1s-1 (1,2.10-2 / pure) Chem Phys Lett 2006

  13. Composants plastiques souples, stables et reproductibles Cellules PV souples 2-3% (APL 2006)

  14. TITK, Rudostadt

  15. Fraunhofer, IZM, Munich

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