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Discussion Session on Defect and Material Characterization

21 st RD50 Workshop, 14-16 November 2012, CERN. RD50. Discussion Session on Defect and Material Characterization. Convener: Mara Bruzzi (Florence University) Discussion: Michael Moll. Topics for discussion:. Project on p-type sensors (Anna Macchiolo & Mara Bruzzi)

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Discussion Session on Defect and Material Characterization

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  1. 21st RD50 Workshop, 14-16 November 2012, CERN RD50 Discussion Session on Defect and Material Characterization Convener: Mara Bruzzi (Florence University)Discussion: Michael Moll Topics for discussion: • Project on p-type sensors (Anna Macchiolo & Mara Bruzzi) • Lower rho p-type would be good for measurements (difficult to get in low quantity!) • Comprehensive list of defects (for simulation group)? • …some work in Hamburg? Alexandra? • Future of WODEAN? • Comparison of various methods? • Experiment: Lifetime; Trapping; Leakage Current; DLTS; TSC; PITS; TCT; ….… • Simulations: Predict what would be expected for various methods using same defect parameters.

  2. Discussion on Defects and Materials • Your input please  • Subject • Another subject M.Moll, 21st RD50 Workshop, 14-16 November 2012

  3. Discussion on Defects and Materials • mm notes for discussion taken during session • HRPITS • Impressive resolution on extraction of emission time constants. • Statistics: Compare samples irradiated with same fluence. • Annealing studies to be compared to conventional DLTS/TSC annealing data? • Are measurements on diodes and the used samples (2 ohmic contacts) really comparable? • Electron irradiation • NIEL violation – impact? • ..could some samples be measured at ITME? • Further studies? • p-type samples (incl. Si with Ge) • Status of silicon with impurities C, Ge, …. • Si with Ge: More defects created than without Ge? • Si with N: Status at ITME? • Erik: There have been previous works on N-doped silicon; it was not possible to properly oxidize the material • Enhanced annealing by carrier injection/recombination • Lifetime measurements • Can we compare/understand lifetime measurements with/in view of other defect measurements on diodes M.Moll, 21st RD50 Workshop, 14-16 November 2012

  4. Discussion on Defects and Materials • mm notes for discussion taken during session • Hall measurements • Measurements on SiGe (5%) should we produce sensors out of such material? • Hall mobility and Magnetoresistance – How to relate to other measurements? • Detrapping measurements • Similar to PITS? Exchange of transient analyses algorithms? M.Moll, 21st RD50 Workshop, 14-16 November 2012

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