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EFE1 Power semiconductors

EFE1 Power semiconductors. Mohan chap. 2 T-484 chap. 10 J.Nybo 14.02.05 Rev. 16.02.05. Diodes. Recovery time. Diode types. Schottky: Vf = 0.4- 0.6V, Vr = 50-100V Fast- recovery: Vr: in 100’s V, If: in 100’sA Line-frequency: Vf: 0.8-1.0V, Vr: in KV, If: in KA. Overview.

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EFE1 Power semiconductors

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  1. EFE1Power semiconductors Mohan chap. 2 T-484 chap. 10 J.Nybo 14.02.05 Rev. 16.02.05

  2. Diodes Recovery time

  3. Diode types • Schottky: Vf = 0.4- 0.6V, Vr = 50-100V • Fast- recovery: Vr: in 100’s V, If: in 100’sA • Line-frequency: Vf: 0.8-1.0V, Vr: in KV, If: in KA

  4. Overview

  5. Desired switch characteristics

  6. Bipolar junction transistors

  7. Darlington gain

  8. Storage delay

  9. Metal Oxide Semiconductor (MOSFET) Possitive R-on temp. coefficients, makes it easy to parallel MOSFET’s

  10. Current rise time Millercapacitor

  11. Voltage rise time

  12. Driver power

  13. Insulated Gate Bipolar Transistor (IGBT)

  14. IGBT characteristics

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