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Investigating Efficiency Droop in InGaN/GaN MQW LEDs with Electron Blocking Layer

Explore the impact of the Electron Blocking Layer (EBL) on efficiency droop in InGaN/GaN multiple quantum well (MQW) LEDs as injection current increases. This study delves into strategies to enhance LED efficiency under high injection current densities.

rebekah-spence
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Investigating Efficiency Droop in InGaN/GaN MQW LEDs with Electron Blocking Layer

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  1. Y.S SYU

  2. OUTLINE • INTRODUCTION • EXPERIMENTAL • RESULTS AND DISCUSSION • CONCLUSION • REFERENCES

  3. INTRODUCTION • As injection current increases in InGaN/GaNmultiple quantum well (MQW) LEDs, we observe a unique phenomenon called “efficiency droop” that is the reduction in LED efficiency at high injection current density. • To improve the efficiency of MQW LEDs, the electron blocking layer (EBL) has played an important role in effectively confining electrons in the MQW region of most MQW LEDs. • In this study, we investigated the effect of EBL on efficiency droop in InGaN/GaN MQW LEDs.

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