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CONTROLLING PLASMA PROPERTIES: ELECTRON INDUCED SECONDARY ELECTRON EMISSION

CONTROLLING PLASMA PROPERTIES: ELECTRON INDUCED SECONDARY ELECTRON EMISSION. DOE Plasma Science Center Control of Plasma Kinetics. Kinetic studies of bounded plasmas by walls having secondary electron emission (SEE) predict a strong dependence of wall potential on SEE [1-3].

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CONTROLLING PLASMA PROPERTIES: ELECTRON INDUCED SECONDARY ELECTRON EMISSION

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  1. CONTROLLING PLASMA PROPERTIES: ELECTRON INDUCED SECONDARY ELECTRON EMISSION DOE Plasma Science Center Control of Plasma Kinetics • Kinetic studies of bounded plasmas by walls having secondary electron emission (SEE) predict a strong dependence of wall potential on SEE [1-3]. • Sheath oscillations occur due to coupling of the sheath potential and non-Maxwellian electron energy distribution functions [2]. • When electrons impacting walls produce more than one secondary on average no classical sheath exists. • Strong dependence of wall potential on SEE allows for active control of plasma properties by judicious choice of the wall material. (a) (b) (c) [1] Phys. Rev. Lett. 108, 255001 (2012) [2] Phys. Rev. Lett. 108, 235001 (2012) [3] Phys. Plasmas 19, 123513 (2012) • Potential profiles: • E=200V/cm no emission • E=200V/cm with SEE, • E =250V/cm with SEE [1,3] HIGHLIGHT PLSC_0113

  2. CONTROL OF VUV FLUXES THROUGH CONTROL OF f() USING PULSED POWER DOE Plasma Science Center Control of Plasma Kinetics • Pulsed plasmas can be used to shape electron energy distributions f() in ways not possible using continuous power. One feature of such shaping of f() is being able to control the ratio of VUV photon to ion fluxes. • The HPEM was used to computationally investigate the control of VUV fluxes in pulsed inductively coupled plasmas in Ar/Cl2 mixtures by shaping f(). The VUV/ion flux ratio decreases with increasing duty cycle. This control can be used to tune the shape of etch profiles. • VUV/ion flux for different duty cycles (Ar/Cl2 = 80/20, 20 mTorr) • Cycle averaged VUV/ion flux vs duty cycle. • Effect on Si etch profile by controlling VUV flux. HIGHLIGHT PLSC_0113

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