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Advances in Thin-Body MOSFET and BJT Device Mechanisms for Enhanced Circuit Performance

This document explores the latest advancements in Thin-Body MOSFET and BJT devices, focusing on how new transistor structures, particularly those utilizing Silicon-on-Insulator (SOI) technology, enhance performance while minimizing off-state leakage (IOFF). We discuss the critical role of reducing transistor dimensions to suppress leakage current and improve drive current through better carrier mobility. Key design principles and electrostatic characteristics of BJTs are also presented, providing a comprehensive view of modern semiconductor device fundamentals.

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Advances in Thin-Body MOSFET and BJT Device Mechanisms for Enhanced Circuit Performance

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  1. EE130/230A Discussion 13 PengZheng

  2. Thin-Body MOSFET: Gate Gate Source Drain “Silicon-on-Insulator” (SOI) Wafer Buried Oxide Substrate Why New Transistor Structures? • Off-state leakage (IOFF) must be suppressed as Lgis scaled down • allows for reductions in VT and hence VDD • Leakage occurs in the region away from the channel surface  Let’s get rid of it! Lg Drain Source 2

  3. Gate Gate Gate Thin-Body MOSFETs • IOFF is suppressed by using an adequately thin body region. • Body doping can be eliminated  higher drive current due to higher carrier mobility Ultra-Thin Body (UTB) Double-Gate (DG) Lg Drain Source TSi TSi Drain Source Buried Oxide Substrate TSi < (1/4)  Lg TSi < (2/3)  Lg 3

  4. Si Thickness [nm] G G 0.0 S D 4.0 8.0 S D 12.0 G 16.0 20.0 G Effect of TSion OFF-state Leakage Lg = 25 nm; tox,eq = 12Å TSi = 10 nm TSi = 20 nm 106 3x102 10-1 Leakage Current Density [A/cm2] @ VDS = 0.7 V IOFF = 2.1 nA/m IOFF = 19 A/m 4

  5. BJT Types and Definitions • The BJT is a 3-terminal device, with two types: PNP and NPN VEB = VE – VB VCB = VC – VB VEC = VE – VC = VEB - VCB VBE = VB – VE VBC = VB – VC VCE = VC – VE = VCB - VEB • Electrostatics: • Under normal operating conditions, the BJT may be viewed electrostatically as two independent pn junctions EE130/230A Fall 2013 Lecture 25, Slide 5 R. F. Pierret, Semiconductor Device Fundamentals, p. 372

  6. BJT Circuit Configurations R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.3 Output Characteristics for Common-Emitter Configuration R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.4 EE130/230A Fall 2013 Lecture 25, Slide 6

  7. BJT Modes of Operation R. F. Pierret, Semiconductor Device Fundamentals, Fig. 10.5 Common-emitter output characteristics (ICvs.VCE) EE130/230A Fall 2013 Lecture 25, Slide 7 *more precisely: not strongly forward biased

  8. Sample Problem

  9. Sample Problem

  10. Questionsregarding the MOSFET design project? Happy Holidays!

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