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Progress and Developments in Spanish Participation for Future Linear Accelerators

The IV Jornadas on Spanish participation in future linear accelerators, held in Madrid on December 2-3, 2009, showcased significant advancements in research and development related to pixel and microstrip silicon detectors. Key topics included DEPFET projects for Belle II PXD PS systems, extensive testing of thin pixel detectors, and performance evaluations using gamma irradiation. Collaboration among institutions such as USC, CERN, and Glasgow facilitated innovative designs and enhancements in sensors, emphasizing contributions to high-energy physics and detector technologies.

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Progress and Developments in Spanish Participation for Future Linear Accelerators

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  1. Actividades de I+DenIGFAE/USC Pablo Vázquez (IGFAE-USC) IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES Madrid, 2-3 Diciembre 2009

  2. R&D activities at Santiago • R&D in pixel detectors • R&D in microstrip silicon detectors • DEPFET project • Belle II PXD PS system • Sensor characterization (Lab, testbeams) • Gamma irradiation (Co-60) • FTD simulations • Dedicated personnel : 5 FTE • Pablo Vázquez, Abraham Gallas, Daniel Esperante, Jevgenij Visniakov, Carmen Iglesias, Eliseo Pérez, Javier Caride IV jornadas FLC, Madrid, 2-3 Dec 2009

  3. R&D in pixel detectors • CERN + LHCb + Timepix/Medipix collaboration • 2 test beams summer 2009 at CERN • Telescope (6) + DUT made with Timepix • 55 um pixel size • 300 um thickness • Hit resolution ~5 um • Track resolution ~2.6 um IV jornadas FLC, Madrid, 2-3 Dec 2009

  4. R&D in pixel detectors • Timepix/Medipix collaboration is working in adapting the Timepix ASIC for HEP experiments • Since we have obtained very good results in testbeams • The LHCb VELO upgrade group has decided to choose the timepix as baseline pixel solution • LHCb + Timepix/Medipix has decided to build an upgraded version of the Timepix telescope (funding partially requested to AIDA WP9) IV jornadas FLC, Madrid, 2-3 Dec 2009

  5. R&D in pixel detectors • USC in collaboration with the CNM, Glasgow and CERN are building thinned pixel detectors • 2D sensors thinned up to 200, 150 and 100 um • To be readout with the Timepix and characterized as function of the thickness • Charge sharing • Efficiency • Time of arrival measurements • Sensors are being produced now • Bump-bonding tryout also at CNM • Possible design variations under discussion • Elongated pixels at 1st row, edgless, gard rings IV jornadas FLC, Madrid, 2-3 Dec 2009

  6. R&D in pixel and microstrips silicon sensors • Telescope based on Timepix with following characteristics • Active area: 2.8x2.8 cm2 • Resolucion: 2 um, 1 ns • Readout rate: 75 kHz • To be used in R&D in detectors for ILC or LHC upgrades with the contribution of the USC • Timing Unit, integration of the DUT daq in the DAQ of the telescope • Mechanics of the DUT • Cold box to work with irradiated sensors in the test beam IV jornadas FLC, Madrid, 2-3 Dec 2009

  7. R&D in microstrip silicon detectors • In case the pixel option cannot meet the physics and time scale requirements, the silicon strip option should hold for LHCb VELO upgrade • The strip option should stay as close as possible to the current design improving its performance • 40 MHz readout • Higher granularity (x10 luminosity increase) • Impact Parameter resolution • Radiation hardness • USC wants to participate in the design and characterization of the new sensors, in the module assembly and tests with particle beams at CERN • Very useful for the FTD conception of ILC IV jornadas FLC, Madrid, 2-3 Dec 2009

  8. R&D in microstrip silicon detectors • 1 module assembled in Santiago to be tested in the lab and in testbeam • IT hybrid (3 beetles) + 2 pitch adapters + PR01 Hamamatsu sensor IV jornadas FLC, Madrid, 2-3 Dec 2009

  9. DEPFET: Belle II PXD PS system 22 x half-module 2m 50cm IV jornadas FLC, Madrid, 2-3 Dec 2009 44 half-modules 17 voltages per half-module Regulation cards on radiation and B-field enviroment

  10. DEPFET: Belle II PXD PS system Belle layout 750 voltages 1500 lines ~krad + H field Regul. Regul. DHH DHH PXD PS PS Electronicshut No radiation > 500W IV jornadas FLC, Madrid, 2-3 Dec 2009

  11. DEPFET: sensor characterization 241Am sourceon a PXD5 matrix • Lab test • Gain (radioactive source), charge collection (laser) • Dependence with radiation IV jornadas FLC, Madrid, 2-3 Dec 2009

  12. DEPFET: sensor characterization • Testbeams • TB09 data taking and analysis • Future testbeams • Irradiated module • Power supply prototype IV jornadas FLC, Madrid, 2-3 Dec 2009

  13. DEPFET: 2009 test beam analysis Eutelescopeframeworkinstalled, someprocesorsworking IV jornadas FLC, Madrid, 2-3 Dec 2009

  14. Gamma irradiation • Failed depfet PXD5 module irradiation this summer • Module dead before irradiation • PXD5 matrices being tested in Karlsruhe and Santiago Dec 09 up to 10Mrad • PXD6 matrices will be irradiated next year IV jornadas FLC, Madrid, 2-3 Dec 2009

  15. ASIC development • In collaboration with Grupo de Vision Artificial at USC a project was submitted to Xunta de Galicia to be produced byTezzaron, using TSVs, a 3D pixel readout chip demonstrator for HEP applications • CMOS 3D 130nm technology • 64x64 pixels of 40x40 um pixel size • 4 layers • Sensor: pn diode • Signal conditioning: amplification, test pulse, comparator • Signal processing: time stamping, counter, time over threshold, 8bit memory • Readout • Possible incorporation of 2 members of this group to the R&D for FLC project in 2013 IV jornadas FLC, Madrid, 2-3 Dec 2009

  16. ILC Forward Tracking Disks Simulations IV jornadas FLC, Madrid, 2-3 Dec 2009 Hit densities have been determined with the new geometry (ILD_00), magnetic field (3.5T) and software for each disk Baseline 3 inner disks with pixel 4 outer disks with strips Density: nhit/cm2/BX (1BX=1event)

  17. ILC Forward Tracking Disks Simulations • According to the hit density disk 3 should probably have the same technology than the outer disks Disk segmentation in petals has also been optimized with the constrain of the wafer size Hit density more uniform than a simple 8 petal/disk segmentation IV jornadas FLC, Madrid, 2-3 Dec 2009

  18. Summary on R&D activities in the USC • R&D in pixel detectors • R&D in microstrips silicon detectors • DEPFET project • Belle II PXD PS system • Sensor characterization (Lab, testbeams) • Gamma irradiation (Co-60) • FTD simulations IV jornadas FLC, Madrid, 2-3 Dec 2009

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