'4h sic' diaporamas de présentation

Personnel Development: Contribution to ARL

Modeling, Characterization and Design of Wide Bandgap MOSFETs for High Temperature and Power Applications UMCP: Neil Goldsman Gary Pennington (Post-Doctoral)* Siddharth Potbhare (MS-Ph.D) ^

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Ion Implantation and Ion Beam Analysis of Silicon Carbide Zsolt Z OLNAI MTA MFA

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Radiation damage in SiO 2 /SiC interfaces

Radiation damage in SiO 2 /SiC interfaces. S. Dixit 1,2 , S. Dhar 2,3 , J. Rozen 1,2 , S. Wang 3 , S. T. Pantelides 3 , D. M. Fleetwood 4,3 , R. Schrimpf 4 and L. C. Feldman 1,2,3 1 Interdisciplinary Materials Science Program 2 Vanderbilt Institute of Nanoscale Science and Engineering

257 views • 16 slides

Radiation damage in SiO 2 /SiC interfaces

Radiation damage in SiO 2 /SiC interfaces. S. Dixit 1,2 , S. Dhar 2,3 , J. Rozen 1,2 , S. Wang 3 , S. T. Pantelides 3 , D. M. Fleetwood 4,3 , R. Schrimpf 4 and L. C. Feldman 1,2,3 1 Interdisciplinary Materials Science Program 2 Vanderbilt Institute of Nanoscale Science and Engineering

321 views • 16 slides

Y.C. J

High-performance 4H-SiC-based ultraviolet p - i - n photodetector Xiaping Chen, Huili Zhu, and Jiafa Cai Zhengyun Wua. Y.C. J. INTRODUCTION. Due to the wide band gap of SiC (4H-SiC ~3.25 eV cut-off wavelength ~380nm).

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SiC basic properties

SiC basic properties. Property Band gap (eV) Breakdown field for 10 17 cm -3 (MV/cm) Saturated Electron Drift (cm/s) Electron mobility (cm 2 /Vs) Hole mobility (cm 2 /Vs) Thermal Conductivity (W/cmK). Si 1.1 0.6 10 7 1350 450 1.5. GaAs 1.42 0.65 1x10 7 6000 330 0.46. GaN

357 views • 8 slides