'Al gate' diaporamas de présentation

EE/MatE 167

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Fig. 1 Kuo et al.

(b). (a). Fig. 1 Kuo et al. Fig. 2 . Kuo et al. (b). (a). Fig. 3 . Kuo et al. Fig. 4 . Kuo et al. Fig. 5 . Kuo et al. Schottky diode. TEM of epi Ge before PMA :. After PMA :. Pt Germanide. Ref :IEEE ELECTRON DEVICE LETTERS.

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ITRS 2003 Front End Processing Challenges

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ITRS 2003 Front End Processing Challenges

216 views • 8 slides